| No. |
Part Name |
Description |
Manufacturer |
| 2281 |
2N499 |
Germanium PNP high frequency transistor designed for driver applications, small-signal amplification, wide band video aplifiers, and VHF/UHF oscillators |
Motorola |
| 2282 |
2N499 |
MADT® PNP communications types - germanium transistor |
Sprague |
| 2283 |
2N499A |
Germanium PNP high frequency transistor designed for driver applications, small-signal amplification, wide band video aplifiers, and VHF/UHF oscillators |
Motorola |
| 2284 |
2N499A |
MADT® PNP communications types - germanium transistor |
Sprague |
| 2285 |
2N502 |
Germanium PNP high frequency transistor designed for driver applications, small-signal amplification, wide band video aplifiers, and VHF/UHF oscillators |
Motorola |
| 2286 |
2N502 |
MADT® PNP communications types - germanium transistor |
Sprague |
| 2287 |
2N502A |
Germanium PNP high frequency transistor designed for driver applications, small-signal amplification, wide band video aplifiers, and VHF/UHF oscillators |
Motorola |
| 2288 |
2N502A |
MADT® PNP communications types - germanium transistor |
Sprague |
| 2289 |
2N502B |
Germanium PNP high frequency transistor designed for driver applications, small-signal amplification, wide band video aplifiers, and VHF/UHF oscillators |
Motorola |
| 2290 |
2N502B |
MADT® PNP communications types - germanium transistor |
Sprague |
| 2291 |
2N503 |
MADT® PNP communications types - germanium transistor |
Sprague |
| 2292 |
2N504 |
MADT® PNP communications types - germanium transistor |
Sprague |
| 2293 |
2N5086 |
PNP silicon annular transistor designed for low-level, low-noise amplifier applications |
Motorola |
| 2294 |
2N5087 |
PNP silicon annular transistor designed for low-level, low-noise amplifier applications |
Motorola |
| 2295 |
2N5088 |
NPN silicon annular transistor designed for low-level, low-noise amplifier applications |
Motorola |
| 2296 |
2N5089 |
NPN silicon annular transistor designed for low-level, low-noise amplifier applications |
Motorola |
| 2297 |
2N508A |
PNP Germanium Milliwatt transistor designed for low noise audio and switching applications |
Motorola |
| 2298 |
2N5109 |
Epitaxial planar NPN transistor, designed for CATV-MATV amplifier applications over a wide frequency range (40 to 860MHz) |
SGS-ATES |
| 2299 |
2N5179 |
Silicon NPN Epitaxial Planar RF Transistor for UHF Applications in Military Communications and Industrial Equipment |
RCA Solid State |
| 2300 |
2N5179 |
Silicon NPN Epitaxial Planar RF Transistor for UHF Applications in Military Communications and Industrial Equipment |
RCA Solid State |
| 2301 |
2N5179 |
Epitaxial planar NPN transistor intended for low-noise tuned-amplifier and converter applications up to 500MHz |
SGS-ATES |
| 2302 |
2N5190 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 2303 |
2N5191 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 2304 |
2N5192 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 2305 |
2N5193 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 2306 |
2N5194 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 2307 |
2N5195 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 2308 |
2N5208 |
PNP silicon annular amplifier transistor designed for general-purpose RF amplifier applications up to 300 MHz |
Motorola |
| 2309 |
2N5294 |
Silicon plastic power NPN transistor. General-purpose switching and amplifier applications. Vceo = 70Vdc, Vcer = 75Vdc, Vcbo = 80Vdc, Veb = 7Vdc, Ic = 4Adc, Ib = 2Adc, PD = 36W. |
USHA India LTD |
| 2310 |
2N5296 |
Silicon plastic power NPN transistor. General-purpose switching and amplifier applications. Vceo = 40Vdc, Vcer = 50Vdc, Vcbo = 60Vdc, Veb = 5Vdc, Ic = 4Adc, Ib = 2Adc, PD = 36W. |
USHA India LTD |
| | | |
