| No. |
Part Name |
Description |
Manufacturer |
| 2401 |
2N6292 |
Silicon plastic power NPN transistor. General-purpose switching and amplifier applications. Vceo = 70Vdc, Vcb = 80Vdc, Veb = 5Vdc, Ic = 7Adc, Ib = 3Adc, PD = 40W. |
USHA India LTD |
| 2402 |
2N6395 |
Thyristor silicon diffused type, medium power control applications |
TOSHIBA |
| 2403 |
2N6396 |
Thyristor silicon diffused type, medium power control applications |
TOSHIBA |
| 2404 |
2N6397 |
Thyristor silicon diffused type, medium power control applications |
TOSHIBA |
| 2405 |
2N6398 |
Thyristor silicon diffused type, medium power control applications |
TOSHIBA |
| 2406 |
2N650 |
PNP Germanium transistor in the audio-frequency range applications |
Motorola |
| 2407 |
2N650A |
PNP Germanium transistor in the audio-frequency range applications |
Motorola |
| 2408 |
2N651 |
PNP Germanium transistor in the audio-frequency range applications |
Motorola |
| 2409 |
2N651A |
PNP Germanium transistor in the audio-frequency range applications |
Motorola |
| 2410 |
2N652 |
PNP Germanium transistor in the audio-frequency range applications |
Motorola |
| 2411 |
2N652A |
PNP Germanium transistor in the audio-frequency range applications |
Motorola |
| 2412 |
2N669 |
PNP germanium power transistor for economical power switching circuits and commercial grade power amplifier applications |
Motorola |
| 2413 |
2N697 |
NPN silicon epitaxy planar transistor for amplifier and switch applications (in german) |
ITT Semiconductors |
| 2414 |
2N697 |
NPN Silicon Transistor for high level audio applications |
Newmarket Transistors NKT |
| 2415 |
2N699 |
NPN silicon annular transistor designed for medium-current switching and amplifier applications |
Motorola |
| 2416 |
2N700 |
PNP germanium mesa transistor for oscillator, frequency multiplier, wide-band mixer and wide-band amplifier applications |
Motorola |
| 2417 |
2N700A |
PNP germanium mesa transistor for oscillator, frequency multiplier, wide-band mixer and wide-band amplifier applications |
Motorola |
| 2418 |
2N705 |
PNP germanium mesa transistor for high-speed switching applications |
Motorola |
| 2419 |
2N706 |
NPN Silicon transistor for switching applications |
IPRS Baneasa |
| 2420 |
2N706 |
NPN silicon annular switching transistor for high-speed switching applications |
Motorola |
| 2421 |
2N706A |
NPN silicon annular switching transistor for high-speed switching applications |
Motorola |
| 2422 |
2N706B |
NPN silicon annular switching transistor for high-speed switching applications |
Motorola |
| 2423 |
2N707 |
NPN silicon epitaxial mesa transistor for VHF oscillator and class C amplifier applications |
Motorola |
| 2424 |
2N707A |
NPN silicon epitaxial mesa transistor for VHF oscillator and class C amplifier applications |
Motorola |
| 2425 |
2N708 |
NPN Silicon transistor for switching applications |
IPRS Baneasa |
| 2426 |
2N708 |
NPN silicon annular transistor for high-speed switching applications |
Motorola |
| 2427 |
2N709 |
NPN silicon epitaxial planar transistor, extremely fast switching and ultra high frequency applications |
ICCE |
| 2428 |
2N709A |
NPN silicon epitaxial planar transistor, extremely fast switching and ultra high frequency applications |
ICCE |
| 2429 |
2N711 |
PNP germanium mesa transistor for high-speed switching applications |
Motorola |
| 2430 |
2N711A |
PNP germanium mesa transistor for high-speed switching applications |
Motorola |
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