| No. |
Part Name |
Description |
Manufacturer |
| 2341 |
2N588 |
MADT® PNP communications types - germanium transistor |
Sprague |
| 2342 |
2N5944 |
450-512MHz CLASS C 12.5V NPN transistor for mobile applications |
SGS Thomson Microelectronics |
| 2343 |
2N5945 |
450-512MHz CLASS C 12.5V 4W NPN RF transistor for mobile applications |
SGS Thomson Microelectronics |
| 2344 |
2N5946 |
450-512MHz CLASS C 12.5V 10W NPN RF transistor for mobile applications |
SGS Thomson Microelectronics |
| 2345 |
2N5995 |
7W, (CW) 175-MHz Silicon NPN Overlay RF Transistor for 12.5 Volt applications in VHF |
RCA Solid State |
| 2346 |
2N6030 |
Collector-emitter/base voltage: 120Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits |
Motorola |
| 2347 |
2N6031 |
Collector-emitter/base voltage: 140Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits |
Motorola |
| 2348 |
2N6034 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 2349 |
2N6035 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 2350 |
2N6036 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 2351 |
2N6037 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 2352 |
2N6038 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 2353 |
2N6039 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 2354 |
2N6050 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 2355 |
2N6051 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 2356 |
2N6052 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 2357 |
2N6053 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 2358 |
2N6054 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 2359 |
2N6055 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 2360 |
2N6056 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 2361 |
2N6057 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 2362 |
2N6058 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 2363 |
2N6059 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 2364 |
2N6080 |
RF & MICROWAVE TRANSISTORS 130... 230 MHZ FM MODULE APPLICATIONS |
Microsemi |
| 2365 |
2N6080 |
175MHz 12.5V NPN RF Transistor for FM mobile applications |
SGS Thomson Microelectronics |
| 2366 |
2N6080 |
V(cbo): 36V; V(ceo): 18V; V(ebo): 4V; VHF communications transistor |
SGS Thomson Microelectronics |
| 2367 |
2N6081 |
RF & MICROWAVE TRANSISTORS 130... 230 MHZ FM MODULE APPLICATIONS |
Microsemi |
| 2368 |
2N6081 |
175MHz 12.5V NPN RF Transistor for FM mobile applications |
SGS Thomson Microelectronics |
| 2369 |
2N6081 |
V(cbo): 36V; V(ceo): 18V; V(ebo): 4V; VHF communications transistor |
SGS Thomson Microelectronics |
| 2370 |
2N6082 |
175MHz 12.5V NPN RF Transistor for FM mobile applications |
SGS Thomson Microelectronics |
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