| No. |
Part Name |
Description |
Manufacturer |
| 2371 |
2N6082 |
V(cbo): 36V; V(ceo): 18V; V(ebo): 4V; VHF communications transistor |
SGS Thomson Microelectronics |
| 2372 |
2N6082 |
VHF Communications Transistor |
ST Microelectronics |
| 2373 |
2N6083 |
RF & MICROWAVE TRANSISTORS 130... 230 MHZ FM MODULE APPLICATIONS |
Microsemi |
| 2374 |
2N6083 |
175MHz 12.5V NPN RF Transistor for FM mobile applications |
SGS Thomson Microelectronics |
| 2375 |
2N6083 |
V(cbo): 36V; V(ceo): 18V; V(ebo): 4V; VHF communications transistor |
SGS Thomson Microelectronics |
| 2376 |
2N6084 |
RF & MICROWAVE TRANSISTORS 130... 230 MHZ FM MODULE APPLICATIONS |
Microsemi |
| 2377 |
2N6084 |
12.5V 40W RF NPN transistor for VHF FM mobile applications |
SGS Thomson Microelectronics |
| 2378 |
2N6084 |
175MHz 12.5V NPN RF Transistor for FM mobile applications |
SGS Thomson Microelectronics |
| 2379 |
2N6084 |
V(cbo): 36V; V(ceo): 18V; V(ebo): 4V; VHF communications transistor |
SGS Thomson Microelectronics |
| 2380 |
2N6098 |
Silicon HOMETAXIAL NPN transistor, medium power linear and switching applications |
SGS-ATES |
| 2381 |
2N6099 |
Silicon HOMETAXIAL NPN transistor, medium power linear and switching applications |
SGS-ATES |
| 2382 |
2N6100 |
Silicon HOMETAXIAL NPN transistor, medium power linear and switching applications |
SGS-ATES |
| 2383 |
2N6101 |
Silicon HOMETAXIAL NPN transistor, medium power linear and switching applications |
SGS-ATES |
| 2384 |
2N6102 |
Silicon HOMETAXIAL NPN transistor, medium power linear and switching applications |
SGS-ATES |
| 2385 |
2N6103 |
Silicon HOMETAXIAL NPN transistor, medium power linear and switching applications |
SGS-ATES |
| 2386 |
2N6104 |
Characteristics and Broadband (225-to-400MHz) Applications of the RCA-2N6104 and 2N6105 UHF Power Transistors - App. Note |
RCA Solid State |
| 2387 |
2N6105 |
Characteristics and Broadband (225-to-400MHz) Applications of the RCA-2N6104 and 2N6105 UHF Power Transistors - App. Note |
RCA Solid State |
| 2388 |
2N6107 |
PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 70Vdc, Vcb = 80Vdc, Veb = 5Vdc Ic = 7Adc, PD = 40W. |
USHA India LTD |
| 2389 |
2N6121 |
Medium Power Linear and Switching Applications |
Boca Semiconductor Corporation |
| 2390 |
2N6121 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 2391 |
2N6122 |
Medium Power Linear and Switching Applications |
Boca Semiconductor Corporation |
| 2392 |
2N6122 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 2393 |
2N6123 |
Medium Power Linear and Switching Applications |
Boca Semiconductor Corporation |
| 2394 |
2N6123 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 2395 |
2N6124 |
Medium Power Linear and Switching Applications |
Boca Semiconductor Corporation |
| 2396 |
2N6124 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 2397 |
2N6125 |
Medium Power Linear and Switching Applications |
Boca Semiconductor Corporation |
| 2398 |
2N6125 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 2399 |
2N6126 |
Medium Power Linear and Switching Applications |
Boca Semiconductor Corporation |
| 2400 |
2N6126 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
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