| No. |
Part Name |
Description |
Manufacturer |
| 271 |
IRF532 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 12A. |
General Electric Solid State |
| 272 |
IRF532 |
N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR |
Motorola |
| 273 |
IRF532 |
Trans MOSFET N-CH 100V 12A 3-Pin(3+Tab) TO-220 |
New Jersey Semiconductor |
| 274 |
IRF532 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
| 275 |
IRF532 |
N-channel MOSFET, 100V, 12A |
SGS Thomson Microelectronics |
| 276 |
IRF532 |
MOSPOWER N-Channel Enhancement Mode Transistor 100V 12A |
Siliconix |
| 277 |
IRF532F1 |
N-channel MOSFET, 100V, 8A |
SGS Thomson Microelectronics |
| 278 |
IRF532FI |
N CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS |
ST Microelectronics |
| 279 |
IRF532FI |
N CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS |
ST Microelectronics |
| 280 |
IRF533 |
N-Channel Power MOSFETs/ 20 A/ 60-100 V |
Fairchild Semiconductor |
| 281 |
IRF533 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 12A. |
General Electric Solid State |
| 282 |
IRF533 |
N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR |
Motorola |
| 283 |
IRF533 |
Trans MOSFET N-CH 80V 12A 3-Pin(3+Tab) TO-220 |
New Jersey Semiconductor |
| 284 |
IRF533 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
| 285 |
IRF533 |
N-channel MOSFET, 80V, 12A |
SGS Thomson Microelectronics |
| 286 |
IRF533 |
MOSPOWER N-Channel Enhancement Mode Transistor 60V 12A |
Siliconix |
| 287 |
IRF533F1 |
N-channel MOSFET, 80V, 8A |
SGS Thomson Microelectronics |
| 288 |
IRF533FI |
N CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS |
ST Microelectronics |
| 289 |
IRF540 |
POWER MOSFET |
BayLinear |
| 290 |
IRF540 |
28A, 100V, 0.077 Ohm, N-Channel Power MOSFETs |
Fairchild Semiconductor |
| 291 |
IRF540 |
N-channel power MOSFET, 100V, 28A |
Harris Semiconductor |
| 292 |
IRF540 |
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
| 293 |
IRF540 |
Trans MOSFET N-CH 100V 28A 3-Pin(3+Tab) TO-220AB |
New Jersey Semiconductor |
| 294 |
IRF540 |
N-channel TrenchMOS(tm) transistor |
Philips |
| 295 |
IRF540 |
N - CHANNEL100V - 00.50Ohm - 30A - TO-220/TO-220FI POWER MOSFET |
SGS Thomson Microelectronics |
| 296 |
IRF540 |
N-CHANNEL 100V - 0.065 OHM - 30A TO-220 LOW GATE CHARGE STRIPFET POWER MOSFET |
SGS Thomson Microelectronics |
| 297 |
IRF540 |
MOSPOWER N-Channel Enhancement Mode Transistor 100V 27A |
Siliconix |
| 298 |
IRF540 |
N-CHANNEL 100V - 0.055 OHM - 22A TO-220 LOW GATE CHARGE STRIPFET II POWER MOSFET |
ST Microelectronics |
| 299 |
IRF540-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 300 |
IRF540A |
N-CHANNEL POWER MOSFET |
Fairchild Semiconductor |
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