No. |
Part Name |
Description |
Manufacturer |
151 |
IRF513 |
N-channel power MOSFET, 80V, 4.9A |
Harris Semiconductor |
152 |
IRF513 |
Trans MOSFET N-CH 60V 3.5A 3-Pin(3+Tab) TO-220 |
New Jersey Semiconductor |
153 |
IRF513 |
N-Channel Power MOSFET |
Samsung Electronic |
154 |
IRF513 |
MOSPOWER N-Channel Enhancement Mode Transistor 60V 3.5A |
Siliconix |
155 |
IRF513 |
N-Channel Enhancement-Mode Vertical DMOS Power FETs |
Supertex Inc |
156 |
IRF520 |
9.2A, 100V, 0.270 Ohm, N-Channel Power MOSFET Features |
Fairchild Semiconductor |
157 |
IRF520 |
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
158 |
IRF520 |
9.2A/ 100V/ 0.270 Ohm/ N-Channel Power MOSFET |
Intersil |
159 |
IRF520 |
Trans MOSFET N-CH 100V 9.2A 3-Pin(3+Tab) TO-220AB |
New Jersey Semiconductor |
160 |
IRF520 |
N-Channel Power MOSFET |
Samsung Electronic |
161 |
IRF520 |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS |
SGS Thomson Microelectronics |
162 |
IRF520 |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS |
SGS Thomson Microelectronics |
163 |
IRF520 |
MOSPOWER N-Channel Enhancement Mode Transistor 100V 8A |
Siliconix |
164 |
IRF520 |
N-CHANNEL 100V - 0.115 OHM - 10A TO-220 LOW GATE CHARGE STRIPFET II POWER MOSFET |
ST Microelectronics |
165 |
IRF520 |
N - CHANNEL ENHANCEMENT MODE VERTICAL DMOS POWER FETs |
Supertex Inc |
166 |
IRF520A |
N-CHANNEL POWER MOSFET |
Fairchild Semiconductor |
167 |
IRF520CF |
Trans MOSFET N-CH 100V 9.7A 3-Pin(3+Tab) TO-220AB |
New Jersey Semiconductor |
168 |
IRF520FI |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS |
SGS Thomson Microelectronics |
169 |
IRF520FI |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS |
SGS Thomson Microelectronics |
170 |
IRF520FI |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS |
ST Microelectronics |
171 |
IRF520L |
Power MOSFET(Vdss=100V/ Rds(on)=0.20ohm/ Id=9.7A) |
International Rectifier |
172 |
IRF520N |
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
173 |
IRF520NL |
HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.20 Ohm, ID = 9.7A |
International Rectifier |
174 |
IRF520NLPBF |
100V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
175 |
IRF520NPBF |
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
176 |
IRF520NS |
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
177 |
IRF520NSTRL |
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
178 |
IRF520NSTRLPBF |
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
179 |
IRF520NSTRR |
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
180 |
IRF520NSTRRPBF |
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
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