| No. |
Part Name |
Description |
Manufacturer |
| 91 |
CZRF52C8V2-HF |
Halogen Free Zener Diodes, PD=0.35Watts, VZ=8.2V |
Comchip Technology |
| 92 |
CZRF52C9V1 |
Zener Diodes, PD=0.35Watts, VZ=9.1V |
Comchip Technology |
| 93 |
CZRF52C9V1-HF |
Halogen Free Zener Diodes, PD=0.35Watts, VZ=9.1V |
Comchip Technology |
| 94 |
CZRF5V1B |
Zener Diodes, PD=0.2Watts, VZ=5.1V |
Comchip Technology |
| 95 |
CZRF5V1B-HF |
Halogen Free Zener Diodes, PD=0.2Watts, VZ=5.1V |
Comchip Technology |
| 96 |
CZRF5V6B |
Zener Diodes, PD=0.2Watts, VZ=5.6V |
Comchip Technology |
| 97 |
CZRF5V6B-HF |
Halogen Free Zener Diodes, PD=0.2Watts, VZ=5.6V |
Comchip Technology |
| 98 |
ELJRF51NGFB |
Chip Inductors - High Freq. Use (Non Magnetic Core) |
Panasonic |
| 99 |
ELJRF51NJFB |
Chip Inductors - High Freq. Use (Non Magnetic Core) |
Panasonic |
| 100 |
ELJRF56NGFB |
Chip Inductors - High Freq. Use (Non Magnetic Core) |
Panasonic |
| 101 |
ELJRF56NJFB |
Chip Inductors - High Freq. Use (Non Magnetic Core) |
Panasonic |
| 102 |
ELJRF5N1DFB |
Chip Inductors - High Freq. Use (Non Magnetic Core) |
Panasonic |
| 103 |
ELJRF5N1ZFB |
Chip Inductors - High Freq. Use (Non Magnetic Core) |
Panasonic |
| 104 |
ELJRF5N6DFB |
Chip Inductors - High Freq. Use (Non Magnetic Core) |
Panasonic |
| 105 |
ELJRF5N6ZFB |
Chip Inductors - High Freq. Use (Non Magnetic Core) |
Panasonic |
| 106 |
FRF501G |
Rectifier: Fast |
Taiwan Semiconductor |
| 107 |
FRF502G |
Rectifier: Fast |
Taiwan Semiconductor |
| 108 |
FRF503G |
Rectifier: Fast |
Taiwan Semiconductor |
| 109 |
FRF504G |
Rectifier: Fast |
Taiwan Semiconductor |
| 110 |
FRF505G |
Rectifier: Fast |
Taiwan Semiconductor |
| 111 |
FRF506G |
Rectifier: Fast |
Taiwan Semiconductor |
| 112 |
FRF507G |
Rectifier: Fast |
Taiwan Semiconductor |
| 113 |
GURF5H60 |
Ultrafast Rectifiers, Forward Current 5.0A, Reverse Voltage 600V, Reverse Recovery Time 30ns |
Vishay |
| 114 |
HRF502 |
Silicon Schottky Barrier Diode for Rectifying |
Hitachi Semiconductor |
| 115 |
HRF502A |
Silicon Schottky Barrier Diode for Rectifying |
Hitachi Semiconductor |
| 116 |
HRF503A |
Silicon Schottky Barrier Diode for Rectifying |
Hitachi Semiconductor |
| 117 |
IRF500 |
50W to 500W HIGH POWER WIRE WOUND RESISTORS FLAT SHAPED ALUMINUM HOUSED |
etc |
| 118 |
IRF500C10RJ |
50W to 500W HIGH POWER WIRE WOUND RESISTORS FLAT SHAPED ALUMINUM HOUSED |
etc |
| 119 |
IRF510 |
5.6A, 100V, 0.540 Ohm, N-Channel Power MOSFET |
Fairchild Semiconductor |
| 120 |
IRF510 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 4.0A. |
General Electric Solid State |
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