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Datasheets for RF5

Datasheets found :: 754
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 |
No. Part Name Description Manufacturer
121 IRF510 N-channel power MOSFET, 100V, 5.6A Harris Semiconductor
122 IRF510 100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package International Rectifier
123 IRF510 5.6A/ 100V/ 0.540 Ohm/ N-Channel Power MOSFET Intersil
124 IRF510 Trans MOSFET N-CH 100V 5.6A 3-Pin(3+Tab) TO-220AB New Jersey Semiconductor
125 IRF510 N-Channel Power MOSFET Samsung Electronic
126 IRF510 MOSPOWER N-Channel Enhancement Mode Transistor 100V 4A Siliconix
127 IRF510 N-Channel Enhancement-Mode Vertical DMOS Power FETs Supertex Inc
128 IRF510-513 N-Channel Power MOSFETs/ 5.5 A/ 60-100V Fairchild Semiconductor
129 IRF510A N-CHANNEL POWER MOSFET Fairchild Semiconductor
130 IRF510F Trans MOSFET N-CH 100V 5.6A 3-Pin(3+Tab) TO-220AB New Jersey Semiconductor
131 IRF510G Trans MOSFET N-CH 100V 5.6A 3-Pin(3+Tab) TO-220AB New Jersey Semiconductor
132 IRF510S 100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package International Rectifier
133 IRF510STRL 100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package International Rectifier
134 IRF510STRR 100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package International Rectifier
135 IRF511 N-Channel Power MOSFETs/ 5.5 A/ 60-100V Fairchild Semiconductor
136 IRF511 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 4.0A. General Electric Solid State
137 IRF511 N-channel power MOSFET, 80V, 5.6A Harris Semiconductor
138 IRF511 Trans MOSFET N-CH 60V 4A 3-Pin(3+Tab) TO-220 New Jersey Semiconductor
139 IRF511 N-Channel Power MOSFET Samsung Electronic
140 IRF511 MOSPOWER N-Channel Enhancement Mode Transistor 60V 4A Siliconix
141 IRF511 N-Channel Enhancement-Mode Vertical DMOS Power FETs Supertex Inc
142 IRF512 N-Channel Power MOSFETs/ 5.5 A/ 60-100V Fairchild Semiconductor
143 IRF512 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 3.5A. General Electric Solid State
144 IRF512 N-channel power MOSFET, 100V, 4.9A Harris Semiconductor
145 IRF512 Trans MOSFET N-CH 100V 3.5A 3-Pin(3+Tab) TO-220 New Jersey Semiconductor
146 IRF512 N-Channel Power MOSFET Samsung Electronic
147 IRF512 MOSPOWER N-Channel Enhancement Mode Transistor 100V 3.5A Siliconix
148 IRF512 N-Channel Enhancement-Mode Vertical DMOS Power FETs Supertex Inc
149 IRF513 N-Channel Power MOSFETs/ 5.5 A/ 60-100V Fairchild Semiconductor
150 IRF513 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 3.5A. General Electric Solid State


Datasheets found :: 754
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 |



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