| No. |
Part Name |
Description |
Manufacturer |
| 211 |
IRF522R |
Trans MOSFET N-CH 100V 7A 3-Pin(3+Tab) TO-220AB |
New Jersey Semiconductor |
| 212 |
IRF523 |
N-Channel Power MOSFETs/ 11 A/ 60-100 V |
Fairchild Semiconductor |
| 213 |
IRF523 |
Trans MOSFET N-CH 60V 7A 3-Pin(3+Tab) TO-220 |
New Jersey Semiconductor |
| 214 |
IRF523 |
N-Channel Power MOSFET |
Samsung Electronic |
| 215 |
IRF523 |
MOSPOWER N-Channel Enhancement Mode Transistor 60V 7A |
Siliconix |
| 216 |
IRF523 |
N - CHANNEL ENHANCEMENT MODE VERTICAL DMOS POWER FETs |
Supertex Inc |
| 217 |
IRF530 |
14A, 100V, 0.160 Ohm, N-Channel Power MOSFETs |
Fairchild Semiconductor |
| 218 |
IRF530 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 14A. |
General Electric Solid State |
| 219 |
IRF530 |
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
| 220 |
IRF530 |
N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR |
Motorola |
| 221 |
IRF530 |
Trans MOSFET N-CH 100V 14A 3-Pin(3+Tab) TO-220AB |
New Jersey Semiconductor |
| 222 |
IRF530 |
N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 223 |
IRF530 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
| 224 |
IRF530 |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS |
SGS Thomson Microelectronics |
| 225 |
IRF530 |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
| 226 |
IRF530 |
MOSPOWER N-Channel Enhancement Mode Transistor 100V 14A |
Siliconix |
| 227 |
IRF530 |
N-CHANNEL 100V - 0.115 OHM - 14A TO-220 LOW GATE CHARGE STRIPFET II POWER MOSFET |
ST Microelectronics |
| 228 |
IRF530 |
100 V,power field effect transistor |
TRANSYS Electronics Limited |
| 229 |
IRF530 |
N-CHANNEL ENHANCEMENT-MODE SILICON GATE |
TRSYS |
| 230 |
IRF530-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 231 |
IRF5305 |
-55V Single P-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
| 232 |
IRF5305 |
Trans MOSFET P-CH 55V 31A 3-Pin(3+Tab) TO-220AB |
New Jersey Semiconductor |
| 233 |
IRF5305L |
-55V Single P-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
| 234 |
IRF5305LPBF |
-55V Single P-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
| 235 |
IRF5305PBF |
-55V Single P-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
| 236 |
IRF5305S |
-55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 237 |
IRF5305SPBF |
-55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 238 |
IRF5305STRL |
-55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 239 |
IRF5305STRR |
-55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 240 |
IRF530A |
N-CHANNEL POWER MOSFET |
Fairchild Semiconductor |
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