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Datasheets for RF5

Datasheets found :: 720
Page: | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 |
No. Part Name Description Manufacturer
241 IRF530NS Trans MOSFET N-CH 100V 17A 3-Pin(2+Tab) D2PAK New Jersey Semiconductor
242 IRF530NSPBF 100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package International Rectifier
243 IRF530NSTRL 100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package International Rectifier
244 IRF530NSTRLPBF 100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package International Rectifier
245 IRF530NSTRR 100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package International Rectifier
246 IRF530NSTRRPBF 100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package International Rectifier
247 IRF530PBF 100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package International Rectifier
248 IRF530S 100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package International Rectifier
249 IRF530STRL 100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package International Rectifier
250 IRF530STRR 100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package International Rectifier
251 IRF531 N-Channel Power MOSFETs/ 20 A/ 60-100 V Fairchild Semiconductor
252 IRF531 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 14A. General Electric Solid State
253 IRF531 N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR Motorola
254 IRF531 Trans MOSFET N-CH 80V 14A 3-Pin(3+Tab) TO-220 New Jersey Semiconductor
255 IRF531 N-CHANNEL POWER MOSFETS Samsung Electronic
256 IRF531 N-channel MOSFET, 80V, 14A SGS Thomson Microelectronics
257 IRF531 N-Channel Enhancement-Mode Vertical DMOS Power FETs Supertex Inc
258 IRF531F1 N-channel MOSFET, 80V, 9A SGS Thomson Microelectronics
259 IRF531FI N CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS ST Microelectronics
260 IRF532 N-Channel Power MOSFETs/ 20 A/ 60-100 V Fairchild Semiconductor
261 IRF532 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 12A. General Electric Solid State
262 IRF532 N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR Motorola
263 IRF532 Trans MOSFET N-CH 100V 12A 3-Pin(3+Tab) TO-220 New Jersey Semiconductor
264 IRF532 N-CHANNEL POWER MOSFETS Samsung Electronic
265 IRF532 N-channel MOSFET, 100V, 12A SGS Thomson Microelectronics
266 IRF532F1 N-channel MOSFET, 100V, 8A SGS Thomson Microelectronics
267 IRF532FI N CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS ST Microelectronics
268 IRF532FI N CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS ST Microelectronics
269 IRF533 N-Channel Power MOSFETs/ 20 A/ 60-100 V Fairchild Semiconductor
270 IRF533 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 12A. General Electric Solid State


Datasheets found :: 720
Page: | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 |



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