| No. |
Part Name |
Description |
Manufacturer |
| 241 |
IRF530F1 |
Trans MOSFET N-CH 100V 10A 3-Pin(3+Tab) TO-220FP |
New Jersey Semiconductor |
| 242 |
IRF530F1 |
N-channel MOSFET, 100V, 9A |
SGS Thomson Microelectronics |
| 243 |
IRF530FI |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
| 244 |
IRF530FI |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS |
SGS Thomson Microelectronics |
| 245 |
IRF530FI |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
ST Microelectronics |
| 246 |
IRF530FP |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
| 247 |
IRF530FP |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
ST Microelectronics |
| 248 |
IRF530L |
Power MOSFET(Vdss=100V/ Rds(on)=0.11ohm/ Id=17A) |
International Rectifier |
| 249 |
IRF530N |
22A, 100V, 0.064 Ohm, N-Channel, Power MOSFET |
Fairchild Semiconductor |
| 250 |
IRF530N |
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
| 251 |
IRF530N |
22A/ 100V/ 0.064 Ohm/ N-Channel Power MOSFET |
Intersil |
| 252 |
IRF530N |
Trans MOSFET N-CH 100V 17A 3-Pin(3+Tab) TO-220AB |
New Jersey Semiconductor |
| 253 |
IRF530N |
N-channel TrenchMOS(tm) transistor |
Philips |
| 254 |
IRF530NL |
100V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
| 255 |
IRF530NLPBF |
100V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
| 256 |
IRF530NPBF |
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
| 257 |
IRF530NS |
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 258 |
IRF530NS |
Trans MOSFET N-CH 100V 17A 3-Pin(2+Tab) D2PAK |
New Jersey Semiconductor |
| 259 |
IRF530NSPBF |
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 260 |
IRF530NSTRL |
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 261 |
IRF530NSTRLPBF |
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 262 |
IRF530NSTRR |
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 263 |
IRF530NSTRRPBF |
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 264 |
IRF530PBF |
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
| 265 |
IRF530S |
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 266 |
IRF530STRL |
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 267 |
IRF530STRR |
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 268 |
IRF531 |
N-Channel Power MOSFETs/ 20 A/ 60-100 V |
Fairchild Semiconductor |
| 269 |
IRF531 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 14A. |
General Electric Solid State |
| 270 |
IRF531 |
N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR |
Motorola |
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