No. |
Part Name |
Description |
Manufacturer |
241 |
IRF530NS |
Trans MOSFET N-CH 100V 17A 3-Pin(2+Tab) D2PAK |
New Jersey Semiconductor |
242 |
IRF530NSPBF |
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
243 |
IRF530NSTRL |
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
244 |
IRF530NSTRLPBF |
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
245 |
IRF530NSTRR |
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
246 |
IRF530NSTRRPBF |
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
247 |
IRF530PBF |
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
248 |
IRF530S |
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
249 |
IRF530STRL |
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
250 |
IRF530STRR |
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
251 |
IRF531 |
N-Channel Power MOSFETs/ 20 A/ 60-100 V |
Fairchild Semiconductor |
252 |
IRF531 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 14A. |
General Electric Solid State |
253 |
IRF531 |
N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR |
Motorola |
254 |
IRF531 |
Trans MOSFET N-CH 80V 14A 3-Pin(3+Tab) TO-220 |
New Jersey Semiconductor |
255 |
IRF531 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
256 |
IRF531 |
N-channel MOSFET, 80V, 14A |
SGS Thomson Microelectronics |
257 |
IRF531 |
N-Channel Enhancement-Mode Vertical DMOS Power FETs |
Supertex Inc |
258 |
IRF531F1 |
N-channel MOSFET, 80V, 9A |
SGS Thomson Microelectronics |
259 |
IRF531FI |
N CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS |
ST Microelectronics |
260 |
IRF532 |
N-Channel Power MOSFETs/ 20 A/ 60-100 V |
Fairchild Semiconductor |
261 |
IRF532 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 12A. |
General Electric Solid State |
262 |
IRF532 |
N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR |
Motorola |
263 |
IRF532 |
Trans MOSFET N-CH 100V 12A 3-Pin(3+Tab) TO-220 |
New Jersey Semiconductor |
264 |
IRF532 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
265 |
IRF532 |
N-channel MOSFET, 100V, 12A |
SGS Thomson Microelectronics |
266 |
IRF532F1 |
N-channel MOSFET, 100V, 8A |
SGS Thomson Microelectronics |
267 |
IRF532FI |
N CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS |
ST Microelectronics |
268 |
IRF532FI |
N CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS |
ST Microelectronics |
269 |
IRF533 |
N-Channel Power MOSFETs/ 20 A/ 60-100 V |
Fairchild Semiconductor |
270 |
IRF533 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 12A. |
General Electric Solid State |
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