| No. |
Part Name |
Description |
Manufacturer |
| 451 |
IXFT60N25Q |
HiPerFET Power MOSFETs Q-Class |
IXYS Corporation |
| 452 |
IXFX60N55Q2 |
Discrete MOSFETs: HiPerFET Power MOSFETS |
IXYS |
| 453 |
IXFX60N55Q2 |
HiPerFET Power MOSFETs Q-Class |
IXYS Corporation |
| 454 |
IXGH60N60 |
IGBT Discretes: Low Saturation Voltage Types Single IGBT |
IXYS |
| 455 |
IXGH60N60B2 |
IGBT Discretes: Mid-Frequency Range (15KHz-40KHz) Types Single IGBT |
IXYS |
| 456 |
IXGK60N60 |
IGBT Discretes: Low Saturation Voltage Types Single IGBT |
IXYS |
| 457 |
IXGN200N60N |
600V HiPerFAST IGBT |
IXYS |
| 458 |
IXGN60N60 |
IGBT Discretes: Low Saturation Voltage Types Single IGBT |
IXYS |
| 459 |
IXGR60N60B2 |
IGBT Discretes: Mid-Frequency Range (15KHz-40KHz) Types Single IGBT |
IXYS |
| 460 |
IXGR60N60C2 |
Lightspeed 2TM Series (Electrically Isolated Back Surface) |
IXYS Corporation |
| 461 |
IXGR60N60C2D1 |
Lightspeed 2TM Series (Electrically Isolated Back Surface) |
IXYS Corporation |
| 462 |
IXGT60N60 |
IGBT Discretes: Low Saturation Voltage Types Single IGBT |
IXYS |
| 463 |
IXGT60N60B2 |
IGBT Discretes: Mid-Frequency Range (15KHz-40KHz) Types Single IGBT |
IXYS |
| 464 |
IXUC160N075 |
Trench Power MOSFET |
IXYS Corporation |
| 465 |
JA58560N |
Mask-ROM 8-Bit CMOS Micro-controller |
etc |
| 466 |
K4E640812B-JC-6 |
8M x 8bit CMOS dynamic RAM with extended data out, 60ns |
Samsung Electronic |
| 467 |
K4E640812B-JCL-6 |
8M x 8bit CMOS dynamic RAM with extended data out, 60ns |
Samsung Electronic |
| 468 |
K4E640812B-TC-6 |
8M x 8bit CMOS dynamic RAM with extended data out, 60ns |
Samsung Electronic |
| 469 |
K4E640812B-TCL-6 |
8M x 8bit CMOS dynamic RAM with extended data out, 60ns |
Samsung Electronic |
| 470 |
K4E640812C-JC-6 |
8M x 8bit CMOS dynamic RAM with extended data out, 60ns |
Samsung Electronic |
| 471 |
K4E640812C-JCL-6 |
8M x 8bit CMOS dynamic RAM with extended data out, 60ns |
Samsung Electronic |
| 472 |
K4E640812C-TC-6 |
8M x 8bit CMOS dynamic RAM with extended data out, 60ns |
Samsung Electronic |
| 473 |
K4E640812C-TCL-6 |
8M x 8bit CMOS dynamic RAM with extended data out, 60ns |
Samsung Electronic |
| 474 |
K4E641612B-TC60 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns |
Samsung Electronic |
| 475 |
K4E641612B-TL60 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns, low power |
Samsung Electronic |
| 476 |
K4E660812B-JC-6 |
8M x 8bit CMOS dynamic RAM with extended data out, 60ns |
Samsung Electronic |
| 477 |
K4E660812B-JCL-6 |
8M x 8bit CMOS dynamic RAM with extended data out, 60ns |
Samsung Electronic |
| 478 |
K4E660812B-TC-6 |
8M x 8bit CMOS dynamic RAM with extended data out, 60ns |
Samsung Electronic |
| 479 |
K4E660812B-TCL-6 |
8M x 8bit CMOS dynamic RAM with extended data out, 60ns |
Samsung Electronic |
| 480 |
K4E660812C-JC-6 |
8M x 8bit CMOS dynamic RAM with extended data out, 60ns |
Samsung Electronic |
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