No. |
Part Name |
Description |
Manufacturer |
331 |
HM514400ASLJ-6 |
1,048,576-word x 4-bid DRAM, 60ns |
Hitachi Semiconductor |
332 |
HM514400ASLR-6 |
1,048,576-word x 4-bid DRAM, 60ns |
Hitachi Semiconductor |
333 |
HM514400ASLRR-6 |
1,048,576-word x 4-bid DRAM, 60ns |
Hitachi Semiconductor |
334 |
HM514400ASLS-6 |
1,048,576-word x 4-bid DRAM, 60ns |
Hitachi Semiconductor |
335 |
HM514400ASLT-6 |
1,048,576-word x 4-bid DRAM, 60ns |
Hitachi Semiconductor |
336 |
HM514400ASLTT-6 |
1,048,576-word x 4-bid DRAM, 60ns |
Hitachi Semiconductor |
337 |
HM514400ASLZ-6 |
1,048,576-word x 4-bid DRAM, 60ns |
Hitachi Semiconductor |
338 |
HM514400AT-6 |
1,048,576-word x 4-bid DRAM, 60ns |
Hitachi Semiconductor |
339 |
HM514400ATT-6 |
1,048,576-word x 4-bid DRAM, 60ns |
Hitachi Semiconductor |
340 |
HM514400ATZ-6 |
1,048,576-word x 4-bid DRAM, 60ns |
Hitachi Semiconductor |
341 |
HM514400AZ-6 |
1,048,576-word x 4-bid DRAM, 60ns |
Hitachi Semiconductor |
342 |
HM514400BLS-6 |
1,048,576-word x 4-bit dynamic random access memory, 60ns |
Hitachi Semiconductor |
343 |
HM514400BLTT-6 |
1,048,576-word x 4-bit dynamic random access memory, 60ns |
Hitachi Semiconductor |
344 |
HM514400BLZ-6 |
1,048,576-word x 4-bit dynamic random access memory, 60ns |
Hitachi Semiconductor |
345 |
HM514400BS-6 |
1,048,576-word x 4-bit dynamic random access memory, 60ns |
Hitachi Semiconductor |
346 |
HM514400BTT-6 |
1,048,576-word x 4-bit dynamic random access memory, 60ns |
Hitachi Semiconductor |
347 |
HM514400BZ-6 |
1,048,576-word x 4-bit dynamic random access memory, 60ns |
Hitachi Semiconductor |
348 |
HM514400CLS-6 |
1,048,576-word x 4-bit dynamic random access memory, 60ns |
Hitachi Semiconductor |
349 |
HM514400CLTT-6 |
1,048,576-word x 4-bit dynamic random access memory, 60ns |
Hitachi Semiconductor |
350 |
HM514400CLZ-6 |
1,048,576-word x 4-bit dynamic random access memory, 60ns |
Hitachi Semiconductor |
351 |
HM514400CS-6 |
1,048,576-word x 4-bit dynamic random access memory, 60ns |
Hitachi Semiconductor |
352 |
HM514400CTT-6 |
1,048,576-word x 4-bit dynamic random access memory, 60ns |
Hitachi Semiconductor |
353 |
HM514400CZ-6 |
1,048,576-word x 4-bit dynamic random access memory, 60ns |
Hitachi Semiconductor |
354 |
HM514800CJ-6 |
60ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
355 |
HM514800CLJ-6 |
60ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
356 |
HM514800CLTT-6 |
60ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
357 |
HM514800CTT-6 |
60ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
358 |
HM5164165J-6 |
64M EDO DRAM (4-Mword x 16-bit), 60ns |
Hitachi Semiconductor |
359 |
HM5164165LJ-6 |
64M EDO DRAM (4-Mword x 16-bit), 60ns |
Hitachi Semiconductor |
360 |
HM5164165LTT-6 |
64M EDO DRAM (4-Mword x 16-bit), 60ns |
Hitachi Semiconductor |
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