No. |
Part Name |
Description |
Manufacturer |
301 |
HM5116405LTS-6 |
16M EDO DRAM (4-Mword x 4-bit), 60ns |
Elpida Memory |
302 |
HM5116405S-6 |
16M EDO DRAM (4-Mword x 4-bit), 60ns |
Elpida Memory |
303 |
HM5116405TS-6 |
16M EDO DRAM (4-Mword x 4-bit), 60ns |
Elpida Memory |
304 |
HM5117405LS-6 |
16M EDO DRAM (4-Mword x 4-bit), 60ns |
Elpida Memory |
305 |
HM5117405LTS-6 |
16M EDO DRAM (4-Mword x 4-bit), 60ns |
Elpida Memory |
306 |
HM5117405S-6 |
16M EDO DRAM (4-Mword x 4-bit), 60ns |
Elpida Memory |
307 |
HM5117405TS-6 |
16M EDO DRAM (4-Mword x 4-bit), 60ns |
Elpida Memory |
308 |
HM514100DLS-6 |
4,194,304-word x 1-bit dynamic RAM, 60ns |
Hitachi Semiconductor |
309 |
HM514100DS-6 |
4,194,304-word x 1-bit dynamic RAM, 60ns |
Hitachi Semiconductor |
310 |
HM514258AJP-6 |
60ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM |
Hitachi Semiconductor |
311 |
HM514258AP-6 |
60ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM |
Hitachi Semiconductor |
312 |
HM514258AZP-6 |
60ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM |
Hitachi Semiconductor |
313 |
HM514260CJ-6 |
60ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
314 |
HM514260CJ-6R |
60ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
315 |
HM514260CLJ-6 |
60ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
316 |
HM514260CLJ-6R |
60ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
317 |
HM514260CTT-6 |
60ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
318 |
HM514260CTT-6R |
60ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
319 |
HM514400AJ-6 |
1,048,576-word x 4-bid DRAM, 60ns |
Hitachi Semiconductor |
320 |
HM514400ALJ-6 |
1,048,576-word x 4-bid DRAM, 60ns |
Hitachi Semiconductor |
321 |
HM514400ALR-6 |
1,048,576-word x 4-bid DRAM, 60ns |
Hitachi Semiconductor |
322 |
HM514400ALRR-6 |
1,048,576-word x 4-bid DRAM, 60ns |
Hitachi Semiconductor |
323 |
HM514400ALS-6 |
1,048,576-word x 4-bid DRAM, 60ns |
Hitachi Semiconductor |
324 |
HM514400ALT-6 |
1,048,576-word x 4-bid DRAM, 60ns |
Hitachi Semiconductor |
325 |
HM514400ALTT-6 |
1,048,576-word x 4-bid DRAM, 60ns |
Hitachi Semiconductor |
326 |
HM514400ALTZ-6 |
1,048,576-word x 4-bid DRAM, 60ns |
Hitachi Semiconductor |
327 |
HM514400ALZ-6 |
1,048,576-word x 4-bid DRAM, 60ns |
Hitachi Semiconductor |
328 |
HM514400AR-6 |
1,048,576-word x 4-bid DRAM, 60ns |
Hitachi Semiconductor |
329 |
HM514400ARR-6 |
1,048,576-word x 4-bid DRAM, 60ns |
Hitachi Semiconductor |
330 |
HM514400AS-6 |
1,048,576-word x 4-bid DRAM, 60ns |
Hitachi Semiconductor |
| | | |