No. |
Part Name |
Description |
Manufacturer |
271 |
GM71CS17403CLT-6 |
CMOS DRAM 4,194,304 words x 4 bit, 5.0V, 60ns, low power |
Hynix Semiconductor |
272 |
GM71CS17403CT-6 |
CMOS DRAM 4,194,304 words x 4 bit, 5.0V, 60ns |
Hynix Semiconductor |
273 |
GM71CS17800CJ-6 |
CMOS DRAM 2,097,152 words x 8 bit, 5.0V, 60ns |
Hynix Semiconductor |
274 |
GM71CS17800CLJ-6 |
CMOS DRAM 2,097,152 words x 8 bit, 5.0V, 60ns, low power |
Hynix Semiconductor |
275 |
GM71CS17800CLT-6 |
CMOS DRAM 2,097,152 words x 8 bit, 5.0V, 60ns, low power |
Hynix Semiconductor |
276 |
GM71CS17800CT-6 |
CMOS DRAM 2,097,152 words x 8 bit, 5.0V, 60ns |
Hynix Semiconductor |
277 |
GM71CS18163ALJ-6 |
1,048,576 words x 16 bit DRAM, 60ns, low power |
LG Semiconductor |
278 |
GM71CS18163ALT-6 |
1,048,576 words x 16 bit DRAM, 60ns, low power |
LG Semiconductor |
279 |
GM71CS18163CLJ-6 |
1,048,576 words x 16 bit CMOS DRAM, 60ns, low power |
Hynix Semiconductor |
280 |
GM71CS18163CLT-6 |
1,048,576 words x 16 bit CMOS DRAM, 60ns, low power |
Hynix Semiconductor |
281 |
GM71V17403CJ-6 |
CMOS DRAM 4,194,304 words x 4 bit, 3.3V, 60ns |
Hynix Semiconductor |
282 |
GM71V17403CLJ-6 |
CMOS DRAM 4,194,304 words x 4 bit, 3.3V, 60ns, low power |
Hynix Semiconductor |
283 |
GM71V17403CLT-6 |
CMOS DRAM 4,194,304 words x 4 bit, 3.3V, 60ns, low power |
Hynix Semiconductor |
284 |
GM71V17403CT-6 |
CMOS DRAM 4,194,304 words x 4 bit, 3.3V, 60ns |
Hynix Semiconductor |
285 |
GM71V18163CJ-6 |
1M words x 16 bit CMOS dynamic RAM, 3.3V, 60ns |
Hynix Semiconductor |
286 |
GM71V18163CLJ-6 |
1M words x 16 bit CMOS dynamic RAM, 3.3V, 60ns |
Hynix Semiconductor |
287 |
GM71VS17403CJ-6 |
CMOS DRAM 4,194,304 words x 4 bit, 3.3V, 60ns |
Hynix Semiconductor |
288 |
GM71VS17403CLJ-6 |
CMOS DRAM 4,194,304 words x 4 bit, 3.3V, 60ns, low power |
Hynix Semiconductor |
289 |
GM71VS17403CLT-6 |
CMOS DRAM 4,194,304 words x 4 bit, 3.3V, 60ns, low power |
Hynix Semiconductor |
290 |
GM71VS17403CT-6 |
CMOS DRAM 4,194,304 words x 4 bit, 3.3V, 60ns |
Hynix Semiconductor |
291 |
GM71VS18163CJ-6 |
1M words x 16 bit CMOS dynamic RAM, 3.3V, 60ns |
Hynix Semiconductor |
292 |
GM71VS18163CLJ-6 |
1M words x 16 bit CMOS dynamic RAM, 3.3V, 60ns |
Hynix Semiconductor |
293 |
GT60N321 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications The 4th Generation |
TOSHIBA |
294 |
HFA160NJ40C |
400V 160A HEXFRED Common Cathode Diode in a TO-244AB Non-Isolated package |
International Rectifier |
295 |
HFA160NJ40D |
400V 160A HEXFRED Doubler Diode in a TO-244AB Non-Isolated package |
International Rectifier |
296 |
HFCT-5760NL |
HFCT-5760NL · 155Mb/s Single mode SFP Transceivers with LC connector, standard de-latch, -10C to +85C |
Agilent (Hewlett-Packard) |
297 |
HFCT-5760NL |
HFCT-5760NL · 155Mb/s Single mode SFP Transceivers with LC connector, standard de-latch, -10C to +85C |
Agilent (Hewlett-Packard) |
298 |
HFCT-5760NP |
HFCT-5760NP · 155Mb/s Single mode SFP Transceivers with LC connector, bail de-latch, -10C to +85C |
Agilent (Hewlett-Packard) |
299 |
HFCT-5760NP |
HFCT-5760NP · 155Mb/s Single mode SFP Transceivers with LC connector, bail de-latch, -10C to +85C |
Agilent (Hewlett-Packard) |
300 |
HM5116405LS-6 |
16M EDO DRAM (4-Mword x 4-bit), 60ns |
Elpida Memory |
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