| No. |
Part Name |
Description |
Manufacturer |
| 361 |
HM5164165TT-6 |
64M EDO DRAM (4-Mword x 16-bit), 60ns |
Hitachi Semiconductor |
| 362 |
HM5164405FJ-6 |
16M x 4-bit EDO DRAM, 60ns |
Hitachi Semiconductor |
| 363 |
HM5164405FLJ-6 |
16M x 4-bit EDO DRAM, 60ns |
Hitachi Semiconductor |
| 364 |
HM5164405FLTT-6 |
16M x 4-bit EDO DRAM, 60ns |
Hitachi Semiconductor |
| 365 |
HM5164405FTT-6 |
16M x 4-bit EDO DRAM, 60ns |
Hitachi Semiconductor |
| 366 |
HM5165165J-6 |
64M EDO DRAM (4-Mword x 16-bit), 60ns |
Hitachi Semiconductor |
| 367 |
HM5165165LJ-6 |
64M EDO DRAM (4-Mword x 16-bit), 60ns |
Hitachi Semiconductor |
| 368 |
HM5165165LTT-6 |
64M EDO DRAM (4-Mword x 16-bit), 60ns |
Hitachi Semiconductor |
| 369 |
HM5165165TT-6 |
64M EDO DRAM (4-Mword x 16-bit), 60ns |
Hitachi Semiconductor |
| 370 |
HM5165405FJ-6 |
16M x 4-bit EDO DRAM, 60ns |
Hitachi Semiconductor |
| 371 |
HM5165405FLJ-6 |
16M x 4-bit EDO DRAM, 60ns |
Hitachi Semiconductor |
| 372 |
HM5165405FLTT-6 |
16M x 4-bit EDO DRAM, 60ns |
Hitachi Semiconductor |
| 373 |
HM5165405FTT-6 |
16M x 4-bit EDO DRAM, 60ns |
Hitachi Semiconductor |
| 374 |
HM51S4260CJ-6 |
60ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 375 |
HM51S4260CJ-6R |
60ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 376 |
HM51S4260CLJ-6 |
60ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 377 |
HM51S4260CLJ-6R |
60ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 378 |
HM51S4260CLTT-6 |
60ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 379 |
HM51S4260CLTT-6R |
60ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 380 |
HM51S4260CTT-6 |
60ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 381 |
HM51S4260CTT-6R |
60ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 382 |
HM51S4800CJ-6 |
60ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
| 383 |
HM51S4800CLJ-6 |
60ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
| 384 |
HM51S4800CLTT-6 |
60ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
| 385 |
HM51S4800CTT-6 |
60ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
| 386 |
HM53051P-60 |
60ns; V(cc): -1.0 to +7.0V; 1W; 262,144-word x 4-bit frame memory |
Hitachi Semiconductor |
| 387 |
HM538123BJ-6 |
60ns; V(cc): -0.5 to +7.0V; 1M VRAM (128 -kword x 8-bit) |
Hitachi Semiconductor |
| 388 |
HY51V17403HGJ-6 |
4,194,304 words x 4 bit EDO RAM, 3.3V, 60ns |
Hynix Semiconductor |
| 389 |
HY51V17403HGLJ-6 |
4,194,304 words x 4 bit EDO RAM, 3.3V, 60ns, low power |
Hynix Semiconductor |
| 390 |
HY51V17403HGLT-6 |
4,194,304 words x 4 bit EDO RAM, 3.3V, 60ns, low power |
Hynix Semiconductor |
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