No. |
Part Name |
Description |
Manufacturer |
391 |
HY51V17403HGT-6 |
4,194,304 words x 4 bit EDO RAM, 3.3V, 60ns |
Hynix Semiconductor |
392 |
HY51V18163HGLJ-6 |
Dynamic RAM organized 1,048,576 words x 16bit, 60ns, low power |
Hynix Semiconductor |
393 |
HY51V18163HGLT-6 |
Dynamic RAM organized 1,048,576 words x 16bit, 60ns, low power |
Hynix Semiconductor |
394 |
HY51V65163HGLJ-6 |
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 60ns, low power |
Hynix Semiconductor |
395 |
HY51V65163HGLT-6 |
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 60ns, low power |
Hynix Semiconductor |
396 |
HY51VS17403HGJ-6 |
4,194,304 words x 4 bit EDO RAM, 3.3V, 60ns |
Hynix Semiconductor |
397 |
HY51VS17403HGLJ-6 |
4,194,304 words x 4 bit EDO RAM, 3.3V, 60ns, low power |
Hynix Semiconductor |
398 |
HY51VS17403HGLT-6 |
4,194,304 words x 4 bit EDO RAM, 3.3V, 60ns, low power |
Hynix Semiconductor |
399 |
HY51VS17403HGT-6 |
4,194,304 words x 4 bit EDO RAM, 3.3V, 60ns |
Hynix Semiconductor |
400 |
HY51VS18163HGJ-6 |
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 60ns |
Hynix Semiconductor |
401 |
HY51VS18163HGLJ-6 |
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 60ns, low power |
Hynix Semiconductor |
402 |
HY51VS18163HGLT-6 |
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 60ns, low power |
Hynix Semiconductor |
403 |
HY51VS18163HGT-6 |
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 60ns |
Hynix Semiconductor |
404 |
HY51VS65163HGJ-6 |
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 60ns |
Hynix Semiconductor |
405 |
HY51VS65163HGLJ-6 |
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 60ns, low power |
Hynix Semiconductor |
406 |
HY51VS65163HGLT-6 |
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 60ns, low power |
Hynix Semiconductor |
407 |
HY51VS65163HGT-6 |
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 60ns |
Hynix Semiconductor |
408 |
HY534256AJ-60 |
256K x 4-bit CMOS DRAM, 60ns |
Hynix Semiconductor |
409 |
HY534256ALJ-60 |
256K x 4-bit CMOS DRAM, 60ns, low power |
Hynix Semiconductor |
410 |
HY534256ALS-60 |
256K x 4-bit CMOS DRAM, 60ns, low power |
Hynix Semiconductor |
411 |
HY534256AS-60 |
256K x 4-bit CMOS DRAM, 60ns |
Hynix Semiconductor |
412 |
HYB5116400BT-60 |
4M x 4 Bit FPM DRAM 5 V 4k 60ns |
Infineon |
413 |
HYC3N2560NO50AA1AA |
MEMORY SPECTRUM |
Infineon |
414 |
ICS1660N |
Incoming Call Line Identification (ICLID) Receiver with Ring Detection |
Integrated Circuit Systems |
415 |
INS8060N |
SINGLE-CHIP 8-BIT N-CHANNEL MICROPROCESSOR (SC/MP FAMILY) |
National Semiconductor |
416 |
IP1060N |
Switched Mode PSU Control Circuit |
SemeLAB |
417 |
IP5560N |
Switched mode power supply control circuit |
SemeLAB |
418 |
IR2011PBF |
V(offset): 200V; 1A; V(out): 10-20V; 80 & 60ns (20ns - max); high and low side driver. For audio class D amplifiers, high power DC-DC SMPS converters, etc. |
International Rectifier |
419 |
IRFB260N |
200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
420 |
IRFB260NPBF |
200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
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