No. |
Part Name |
Description |
Manufacturer |
241 |
GLT4160L04S-60J3 |
60ns; 4M x 4 CMOS dynamic RAM with extended data output |
G-LINK Technology |
242 |
GLT4160L04S-60TC |
60ns; 4M x 4 CMOS dynamic RAM with extended data output |
G-LINK Technology |
243 |
GLT4160L04SE-60J3 |
60ns; 4M x 4 CMOS dynamic RAM with extended data output |
G-LINK Technology |
244 |
GLT4160L04SE-60TC |
60ns; 4M x 4 CMOS dynamic RAM with extended data output |
G-LINK Technology |
245 |
GLT4160L16-60J4 |
60ns; 1k x 16 CMOS dynamic RAM with extended data output |
G-LINK Technology |
246 |
GLT4160L16-60TC |
60ns; 1k x 16 CMOS dynamic RAM with extended data output |
G-LINK Technology |
247 |
GLT4160M04-60J3 |
60ns; 4K x 4 CMOS dynamic RAM with extended data output |
G-LINK Technology |
248 |
GLT4160M04-60TC |
60ns; 4K x 4 CMOS dynamic RAM with extended data output |
G-LINK Technology |
249 |
GLT4160M04E-60J3 |
60ns; 4k x 4 CMOS dynamic RAM with extended data output |
G-LINK Technology |
250 |
GLT4160M04E-60TC |
60ns; 4k x 4 CMOS dynamic RAM with extended data output |
G-LINK Technology |
251 |
GLT44108-60J4 |
60ns; Ultra low power 128k x 8 CMOS SRAM |
G-LINK Technology |
252 |
GM71C17400CJ-6 |
4,194,304 words x 4 bit CMOS dynamic RAM, 60ns |
Hynix Semiconductor |
253 |
GM71C17400CT-6 |
4,194,304 words x 4 bit CMOS dynamic RAM, 60ns |
Hynix Semiconductor |
254 |
GM71C17403CJ-6 |
CMOS DRAM 4,194,304 words x 4 bit, 5.0V, 60ns |
Hynix Semiconductor |
255 |
GM71C17403CLJ-6 |
CMOS DRAM 4,194,304 words x 4 bit, 5.0V, 60ns, low power |
Hynix Semiconductor |
256 |
GM71C17403CLT-6 |
CMOS DRAM 4,194,304 words x 4 bit, 5.0V, 60ns, low power |
Hynix Semiconductor |
257 |
GM71C17403CT-6 |
CMOS DRAM 4,194,304 words x 4 bit, 5.0V, 60ns |
Hynix Semiconductor |
258 |
GM71C17800CJ-6 |
CMOS DRAM 2,097,152 words x 8 bit, 5.0V, 60ns |
Hynix Semiconductor |
259 |
GM71C17800CLT-6 |
CMOS DRAM 2,097,152 words x 8 bit, 5.0V, 60ns, low power |
Hynix Semiconductor |
260 |
GM71C17800CT-6 |
CMOS DRAM 2,097,152 words x 8 bit, 5.0V, 60ns |
Hynix Semiconductor |
261 |
GM71C18163AJ-6 |
1,048,576 words x 16 bit DRAM, 60ns |
LG Semiconductor |
262 |
GM71C18163AT-6 |
1,048,576 words x 16 bit DRAM, 60ns |
LG Semiconductor |
263 |
GM71C18163CJ-6 |
1,048,576 words x 16 bit CMOS DRAM, 60ns |
Hynix Semiconductor |
264 |
GM71C18163CT-6 |
1,048,576 words x 16 bit CMOS DRAM, 60ns |
Hynix Semiconductor |
265 |
GM71CS17400CJ-6 |
4,194,304 words x 4 bit CMOS dynamic RAM, 60ns |
Hynix Semiconductor |
266 |
GM71CS17400CLJ-6 |
4,194,304 words x 4 bit CMOS dynamic RAM, 60ns, low power |
Hynix Semiconductor |
267 |
GM71CS17400CLT-6 |
4,194,304 words x 4 bit CMOS dynamic RAM, 60ns, low power |
Hynix Semiconductor |
268 |
GM71CS17400CT-6 |
4,194,304 words x 4 bit CMOS dynamic RAM, 60ns |
Hynix Semiconductor |
269 |
GM71CS17403CJ-6 |
CMOS DRAM 4,194,304 words x 4 bit, 5.0V, 60ns |
Hynix Semiconductor |
270 |
GM71CS17403CLJ-6 |
CMOS DRAM 4,194,304 words x 4 bit, 5.0V, 60ns, low power |
Hynix Semiconductor |
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