| No. |
Part Name |
Description |
Manufacturer |
| 541 |
2N2906A |
0.400W Switching PNP Metal Can Transistor. 60V Vceo, 0.600A Ic, 40 hFE. |
Continental Device India Limited |
| 542 |
2N2906A |
Silicon low power general purpose PNP transistor - metal case |
IPRS Baneasa |
| 543 |
2N2907 |
0.400W Switching PNP Metal Can Transistor. 40V Vceo, 0.600A Ic, 30 hFE. |
Continental Device India Limited |
| 544 |
2N2907 |
Silicon low power general purpose PNP transistor - metal case |
IPRS Baneasa |
| 545 |
2N2907 |
TO-18 Metal Can Transistors |
Micro Commercial Components |
| 546 |
2N2907 |
Bipolar PNP Device in a Hermetically sealed TO18 Metal Package |
SemeLAB |
| 547 |
2N2907A |
0.400W Switching PNP Metal Can Transistor. 60V Vceo, 0.600A Ic, 50 hFE. |
Continental Device India Limited |
| 548 |
2N2907A |
Silicon low power general purpose PNP transistor - metal case |
IPRS Baneasa |
| 549 |
2N2907A |
TO-18 Metal Can Transistors |
Micro Commercial Components |
| 550 |
2N2993 |
Bipolar NPN Device in a Hermetically sealed TO5 Metal Package |
SemeLAB |
| 551 |
2N3010 |
NPN MEtal CAN - Saturated Switch |
Central Semiconductor |
| 552 |
2N3019 |
0.800W General Purpose NPN Metal Can Transistor. 80V Vceo, A Ic, 50 hFE. |
Continental Device India Limited |
| 553 |
2N3020 |
0.800W General Purpose NPN Metal Can Transistor. 80V Vceo, A Ic, 30 - 100 hFE. |
Continental Device India Limited |
| 554 |
2N3053 |
5.000W General Purpose NPN Metal Can Transistor. 40V Vceo, 0.700A Ic, 50 - 250 hFE. |
Continental Device India Limited |
| 555 |
2N3053A |
7.000W General Purpose NPN Metal Can Transistor. 60V Vceo, 0.700A Ic, 25 hFE. |
Continental Device India Limited |
| 556 |
2N3054 |
General Purpose NPN Transistor - metal case |
IPRS Baneasa |
| 557 |
2N3055 |
115.000W Power NPN Metal Can Transistor. 60V Vceo, 15.000A Ic, 5 hFE. |
Continental Device India Limited |
| 558 |
2N3055 |
High Power General Purpose NPN Transistor - metal case |
IPRS Baneasa |
| 559 |
2N3055/1 |
High Power General Purpose NPN Transistor - metal case |
IPRS Baneasa |
| 560 |
2N3055/10 |
High Power General Purpose NPN Transistor - metal case |
IPRS Baneasa |
| 561 |
2N3055/2 |
High Power General Purpose NPN Transistor - metal case |
IPRS Baneasa |
| 562 |
2N3055/3 |
High Power General Purpose NPN Transistor - metal case |
IPRS Baneasa |
| 563 |
2N3055/4 |
High Power General Purpose NPN Transistor - metal case |
IPRS Baneasa |
| 564 |
2N3055/5 |
High Power General Purpose NPN Transistor - metal case |
IPRS Baneasa |
| 565 |
2N3055/6 |
High Power General Purpose NPN Transistor - metal case |
IPRS Baneasa |
| 566 |
2N3055/7 |
High Power General Purpose NPN Transistor - metal case |
IPRS Baneasa |
| 567 |
2N3055/8 |
High Power General Purpose NPN Transistor - metal case |
IPRS Baneasa |
| 568 |
2N3055/9 |
High Power General Purpose NPN Transistor - metal case |
IPRS Baneasa |
| 569 |
2N3055E |
Silicon epitaxial-base NPN transistor in Jedec TO-3 metal case |
SGS-ATES |
| 570 |
2N3055H |
High Power General Purpose NPN Transistor - metal case |
IPRS Baneasa |
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