| No. |
Part Name |
Description |
Manufacturer |
| 601 |
2N3636 |
1.000W RF PNP Metal Can Transistor. 175V Vceo, 1.000A Ic, 40 hFE. |
Continental Device India Limited |
| 602 |
2N3637 |
1.000W RF PNP Metal Can Transistor. 175V Vceo, 1.000A Ic, 80 hFE. |
Continental Device India Limited |
| 603 |
2N3665 |
Bipolar NPN Device in a Hermetically sealed TO39 Metal Package |
SemeLAB |
| 604 |
2N3700 |
0.500W General Purpose NPN Metal Can Transistor. 80V Vceo, 1.000A Ic, 100 - 300 hFE. |
Continental Device India Limited |
| 605 |
2N3716 |
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package |
SemeLAB |
| 606 |
2N3724 |
1.000W Switching NPN Metal Can Transistor. 30V Vceo, 1.000A Ic, 60 - 150 hFE. |
Continental Device India Limited |
| 607 |
2N3725 |
1.000W Switching NPN Metal Can Transistor. 50V Vceo, 1.000A Ic, 60 - 150 hFE. |
Continental Device India Limited |
| 608 |
2N3734 |
Bipolar NPN Device in aHermetically sealed TO39 Metal Package |
SemeLAB |
| 609 |
2N3767 |
Bipolar NPN Device in a Hermetically sealed TO66 Metal Package |
SemeLAB |
| 610 |
2N3771 |
High Power General Purpose NPN Transistor - metal case |
IPRS Baneasa |
| 611 |
2N3772 |
150.000W Power NPN Metal Can Transistor. 60V Vceo, 20.000A Ic, 15 - 60 hFE. |
Continental Device India Limited |
| 612 |
2N3772 |
High Power General Purpose NPN Transistor - metal case |
IPRS Baneasa |
| 613 |
2N3773 |
150.000W Power NPN Metal Can Transistor. 140V Vceo, 16.000A Ic, 5 hFE. |
Continental Device India Limited |
| 614 |
2N3773 |
High Power General Purpose NPN Transistor - metal case |
IPRS Baneasa |
| 615 |
2N3821 |
N channel field effect transistor (metal can) |
SESCOSEM |
| 616 |
2N3822 |
N channel field effect transistor (metal can) |
SESCOSEM |
| 617 |
2N3823 |
N channel field effect transistor (metal can) |
SESCOSEM |
| 618 |
2N3824 |
N channel field effect transistor (metal can) |
SESCOSEM |
| 619 |
2N3867 |
1.000W General Purpose PNP Metal Can Transistor. 40V Vceo, 3.000A Ic, 40 - 200 hFE. |
Continental Device India Limited |
| 620 |
2N3867 |
Silicon epitaxial planar PNP transistor in Jedec TO-39 metal case |
SGS-ATES |
| 621 |
2N3868 |
Silicon epitaxial planar PNP transistor in Jedec TO-39 metal case |
SGS-ATES |
| 622 |
2N3918 |
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package |
SemeLAB |
| 623 |
2N3931 |
Bipolar PNP Device in a Hermetically sealed TO39 Metal Package |
SemeLAB |
| 624 |
2N3966 |
N channel field effect transistor (metal can) |
SESCOSEM |
| 625 |
2N4000 |
Bipolar NPN Device in a Hermetically sealed TO39 Metal Package |
SemeLAB |
| 626 |
2N4001 |
Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. |
SemeLAB |
| 627 |
2N4027 |
Bipolar PNP Device in a Hermetically sealed TO18 Metal Package |
SemeLAB |
| 628 |
2N4030 |
0.800W RF PNP Metal Can Transistor. 60V Vceo, 1.000A Ic, 40 - 120 hFE. |
Continental Device India Limited |
| 629 |
2N4031 |
0.800W RF PNP Metal Can Transistor. 80V Vceo, 1.000A Ic, 40 - 120 hFE. |
Continental Device India Limited |
| 630 |
2N4032 |
0.800W RF PNP Metal Can Transistor. 60V Vceo, 1.000A Ic, 100 - 300 hFE. |
Continental Device India Limited |
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