| No. |
Part Name |
Description |
Manufacturer |
| 571 |
2N3055HV |
90.000W Power NPN Metal Can Transistor. 100V Vceo, 15.000A Ic, 5 hFE. |
Continental Device India Limited |
| 572 |
2N3055W |
High Power General Purpose NPN Transistor - metal case |
IPRS Baneasa |
| 573 |
2N3174 |
Bipolar PNP Device in a Hermetically sealed TO3 Metal Package |
SemeLAB |
| 574 |
2N3202 |
Bipolar PNP Device in a Hermetically sealed TO39 Metal Package |
SemeLAB |
| 575 |
2N3244 |
Bipolar PNP Device in a Hermetically sealed TO39 Metal Package |
SemeLAB |
| 576 |
2N3250 |
0.360W General Purpose PNP Metal Can Transistor. 40V Vceo, 0.200A Ic, 40 hFE. |
Continental Device India Limited |
| 577 |
2N3250A |
0.360W General Purpose PNP Metal Can Transistor. 60V Vceo, 0.200A Ic, 40 hFE. |
Continental Device India Limited |
| 578 |
2N3251 |
0.360W General Purpose PNP Metal Can Transistor. 40V Vceo, 0.200A Ic, 80 hFE. |
Continental Device India Limited |
| 579 |
2N3251A |
0.360W General Purpose PNP Metal Can Transistor. 60V Vceo, 0.200A Ic, 90 hFE. |
Continental Device India Limited |
| 580 |
2N3439 |
1.000W General Purpose NPN Metal Can Transistor. 350V Vceo, 1.000A Ic, 40 - 160 hFE. |
Continental Device India Limited |
| 581 |
2N3439 |
NPN switching transistor - metal case, high power |
IPRS Baneasa |
| 582 |
2N3440 |
1.000W High Voltage NPN Metal Can Transistor. 250V Vceo, 1.000A Ic, 40 - 160 hFE. |
Continental Device India Limited |
| 583 |
2N3440 |
NPN switching transistor - metal case, high power |
IPRS Baneasa |
| 584 |
2N3441 |
General Purpose NPN Transistor - metal case |
IPRS Baneasa |
| 585 |
2N3442 |
High Power General Purpose NPN Transistor - metal case |
IPRS Baneasa |
| 586 |
2N3442 |
High voltage hometaxial NPN transistor in Jedec TO-3 metal case |
SGS-ATES |
| 587 |
2N3445 |
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package |
SemeLAB |
| 588 |
2N3447 |
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package |
SemeLAB |
| 589 |
2N3458 |
N channel field effect transistor (metal can) |
SESCOSEM |
| 590 |
2N3478 |
0.200W General Purpose NPN Metal Can Transistor. 15V Vceo, 0.050A Ic, 25 - 150 hFE. |
Continental Device India Limited |
| 591 |
2N3496 |
0.400W General Purpose PNP Metal Can Transistor. 80V Vceo, 0.100A Ic, 35 hFE. |
Continental Device India Limited |
| 592 |
2N3497 |
0.400W General Purpose PNP Metal Can Transistor. 120V Vceo, 0.100A Ic, 35 hFE. |
Continental Device India Limited |
| 593 |
2N3498 |
1.000W RF NPN Metal Can Transistor. 100V Vceo, 0.500A Ic, 20 hFE. |
Continental Device India Limited |
| 594 |
2N3499 |
1.000W RF NPN Metal Can Transistor. 100V Vceo, 0.500A Ic, 35 hFE. |
Continental Device India Limited |
| 595 |
2N3500 |
1.000W RF NPN Metal Can Transistor. 150V Vceo, 0.300A Ic, 20 hFE. |
Continental Device India Limited |
| 596 |
2N3501 |
1.000W RF NPN Metal Can Transistor. 150V Vceo, 0.300A Ic, 35 hFE. |
Continental Device India Limited |
| 597 |
2N3501 |
TO-39 Metal Can Transistor |
Micro Commercial Components |
| 598 |
2N3535 |
Bipolar NPNP Device in a Hermetically sealed TO39 Metal Package. |
SemeLAB |
| 599 |
2N3558 |
Bipolar NPNP Device in a Hermetically sealed TO39 Metal Package |
SemeLAB |
| 600 |
2N3635 |
1.000W RF PNP Metal Can Transistor. 140V Vceo, 1.000A Ic, 80 hFE. |
Continental Device India Limited |
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