| No. |
Part Name |
Description |
Manufacturer |
| 631 |
2N4033 |
0.800W RF PNP Metal Can Transistor. 80V Vceo, 1.000A Ic, 100 - 300 hFE. |
Continental Device India Limited |
| 632 |
2N4036 |
1.000W General Purpose PNP Metal Can Transistor. 65V Vceo, 1.000A Ic, 20 hFE. |
Continental Device India Limited |
| 633 |
2N4037 |
1.000W General Purpose PNP Metal Can Transistor. 40V Vceo, 1.000A Ic, 50 - 250 hFE. |
Continental Device India Limited |
| 634 |
2N404 |
PNP Germanium RF Alloy Transistor in TO5 metal case |
Newmarket Transistors NKT |
| 635 |
2N4091 |
N channel field effect transistor (metal can) |
SESCOSEM |
| 636 |
2N4091A |
N channel field effect transistor (metal can) |
SESCOSEM |
| 637 |
2N4092 |
N channel field effect transistor (metal can) |
SESCOSEM |
| 638 |
2N4092A |
N channel field effect transistor (metal can) |
SESCOSEM |
| 639 |
2N4093 |
N channel field effect transistor (metal can) |
SESCOSEM |
| 640 |
2N4093A |
N channel field effect transistor (metal can) |
SESCOSEM |
| 641 |
2N4113 |
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package |
SemeLAB |
| 642 |
2N4114 |
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package |
SemeLAB |
| 643 |
2N4220 |
N channel field effect transistor (metal can) |
SESCOSEM |
| 644 |
2N4220A |
N channel field effect transistor (metal can) |
SESCOSEM |
| 645 |
2N4221 |
N channel field effect transistor (metal can) |
SESCOSEM |
| 646 |
2N4221A |
N channel field effect transistor (metal can) |
SESCOSEM |
| 647 |
2N4222 |
N channel field effect transistor (metal can) |
SESCOSEM |
| 648 |
2N4222A |
N channel field effect transistor (metal can) |
SESCOSEM |
| 649 |
2N4231 |
Bipolar NPN Device in a Hermetically sealed TO66 Metal Package |
SemeLAB |
| 650 |
2N4232 |
Bipolar NPN Device in a Hermetically sealed TO66 Metal Package |
SemeLAB |
| 651 |
2N4234 |
6.000W General Purpose PNP Metal Can Transistor. 40V Vceo, 1.000A Ic, 40 hFE. |
Continental Device India Limited |
| 652 |
2N4235 |
6.000W General Purpose PNP Metal Can Transistor. 60V Vceo, 1.000A Ic, 40 hFE. |
Continental Device India Limited |
| 653 |
2N4236 |
6.000W General Purpose PNP Metal Can Transistor. 80V Vceo, 1.000A Ic, 40 hFE. |
Continental Device India Limited |
| 654 |
2N4237 |
1.000W General Purpose NPN Metal Can Transistor. 40V Vceo, 1.000A Ic, 15 hFE. |
Continental Device India Limited |
| 655 |
2N4238 |
6.000W General Purpose NPN Metal Can Transistor. 60V Vceo, 1.000A Ic, 30 hFE. |
Continental Device India Limited |
| 656 |
2N4239 |
1.000W General Purpose NPN Metal Can Transistor. 80V Vceo, 1.000A Ic, 15 hFE. |
Continental Device India Limited |
| 657 |
2N4347 |
General purpose NPN transistor - metal case, high power |
IPRS Baneasa |
| 658 |
2N4347 |
High voltage hometaxial NPN transistor in Jedec TO-3 metal case |
SGS-ATES |
| 659 |
2N4348 |
High Power General Purpose NPN Transistor - metal case |
IPRS Baneasa |
| 660 |
2N4391 |
N channel field effect transistor (metal can) |
SESCOSEM |
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