| No. |
Part Name |
Description |
Manufacturer |
| 631 |
HN1K02FU |
Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch Applications |
TOSHIBA |
| 632 |
HN1K03FU |
Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch Applications |
TOSHIBA |
| 633 |
HN1K04FU |
Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch Applications |
TOSHIBA |
| 634 |
HN1K05FU |
Field Effect Transistor Silicon N Channel MOS Type For Portable Devices High Speed Switching Applications Interface Applications |
TOSHIBA |
| 635 |
HN1K06FU |
Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch Applications |
TOSHIBA |
| 636 |
HN1L02FU |
Field Effect Transistor Silicon N-P Channel MOS Type High Speed Switching Applications Analog Switch Applications |
TOSHIBA |
| 637 |
HN1L03FU |
Field Effect Transistor Silicon N-P Channel MOS Type High Speed Switching Applications Analog Switch Applications |
TOSHIBA |
| 638 |
HN2D01F |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 639 |
HN2D01FU |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 640 |
HN2D02FU |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 641 |
HN2D02FUTW1T1 |
Ultra High Speed Switching Diodes |
ON Semiconductor |
| 642 |
HN2S01F |
Diode Silicon Epitaxial Schottky Barrier Type Low Voltage High Speed Switching Application |
TOSHIBA |
| 643 |
HN2S01FU |
Diode Silicon Epitaxial Schottky Barrier Type Low Voltage High Speed Switching Application |
TOSHIBA |
| 644 |
HN4K03JU |
Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch Applications |
TOSHIBA |
| 645 |
HSB124 |
Silicon Epitaxial Planar Diode for High Speed Switching |
Hitachi Semiconductor |
| 646 |
HSM221C |
Silicon Epitaxial Planar Diode for High Speed Switching |
Hitachi Semiconductor |
| 647 |
HSM2838C |
Silicon Epitaxial Planar Diode for High Speed Switching |
Hitachi Semiconductor |
| 648 |
J1N4148 |
Silicon signal diode, high speed switching (chips) |
SESCOSEM |
| 649 |
J1N4149 |
Silicon signal diode, high speed switching (chips) |
SESCOSEM |
| 650 |
J1N4151 |
Silicon signal diode, high speed switching (chips) |
SESCOSEM |
| 651 |
J1N4446 |
Silicon signal diode, high speed switching (chips) |
SESCOSEM |
| 652 |
J1N4447 |
Silicon signal diode, high speed switching (chips) |
SESCOSEM |
| 653 |
J1N4448 |
Silicon signal diode, high speed switching (chips) |
SESCOSEM |
| 654 |
J1N4449 |
Silicon signal diode, high speed switching (chips) |
SESCOSEM |
| 655 |
KA206 |
Diode for very high speed switching circuits |
Tesla Elektronicke |
| 656 |
KA206S |
Diode for very high speed switching circuits |
Tesla Elektronicke |
| 657 |
KA207 |
Diode for very high speed switching circuits |
Tesla Elektronicke |
| 658 |
KA221 |
Diode for very high speed switching circuits |
Tesla Elektronicke |
| 659 |
KA222 |
Diode for very high speed switching circuits |
Tesla Elektronicke |
| 660 |
KA223 |
Diode for very high speed switching circuits |
Tesla Elektronicke |
| | | |
