| No. |
Part Name |
Description |
Manufacturer |
| 691 |
MC2841 |
FOR HIGH SPEED SWITCHING APPLICATION SILICON EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 692 |
MC2844 |
Small signal diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 75 V. |
Isahaya Electronics Corporation |
| 693 |
MC2845 |
Small signal diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 35 V. |
Isahaya Electronics Corporation |
| 694 |
MC2846 |
Small signal diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 75 V. |
Isahaya Electronics Corporation |
| 695 |
MC2848 |
FOR HIGH SPEED SWITCHING APPLICATION SILICON EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 696 |
MC2852 |
Diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 75 V. |
Isahaya Electronics Corporation |
| 697 |
MC2854 |
Diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 75 V. |
Isahaya Electronics Corporation |
| 698 |
MC961 |
Diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 75 V. |
Isahaya Electronics Corporation |
| 699 |
MC981 |
Diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 75 V. |
Isahaya Electronics Corporation |
| 700 |
MC982 |
Diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 35 V. |
Isahaya Electronics Corporation |
| 701 |
MCH3312 |
P-Channel MOSFET for Ultra-high Speed Switching |
ON Semiconductor |
| 702 |
MCH3406 |
Ultra-high speed switching |
ON Semiconductor |
| 703 |
MCH3412 |
Ultra-high speed switching |
ON Semiconductor |
| 704 |
MCH6307 |
P-Channel MOSFET for Ultra-high Speed Switching Applications |
ON Semiconductor |
| 705 |
MG100Q2YS65H |
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications |
TOSHIBA |
| 706 |
MG150Q2YS65H |
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications |
TOSHIBA |
| 707 |
MG200Q2YS65H |
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications |
TOSHIBA |
| 708 |
MG300Q2YS65H |
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications |
TOSHIBA |
| 709 |
MG400Q1US65H |
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications |
TOSHIBA |
| 710 |
MG600Q1US65H |
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications |
TOSHIBA |
| 711 |
MM1748 |
NPN silicon annular transistor designed for ultra-high speed switching applications |
Motorola |
| 712 |
MMBD914 |
HIGH SPEED SWITCHING DIODE |
Zowie Technology Corporation |
| 713 |
MMDL914T1 |
SURFACE MOUNT HIGH SPEED SWITCHING DIODE |
Zowie Technology Corporation |
| 714 |
MP4207 |
N & P CHANNEL MOS TYPE (HIGH POWER HIGH SPEED SWITCHING APPLICATIONS, H - SWITCH DRIVER) |
TOSHIBA |
| 715 |
MP4208 |
Power MOS FET Module Silicon P Channel MOS Type (L2-pi-MOSV 4 in 1) High Power High Speed Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. |
TOSHIBA |
| 716 |
MP4209 |
Power MOS FET Module Silicon N Channel MOS Type (L2-pi-MOSV 4 in 1) High Power High Speed Switching Applications. For Printer Head Pin Driver and Pulse Motor Driver For Solenoid Driver |
TOSHIBA |
| 717 |
MP4210 |
Power MOS FET Module Silicon N Channel MOS Type (L2-pi-MOSV 4 in 1) High Power, High Speed Switching Applications For Printer Head Pin Driver and Pulse Motor Driver For Solenoid Driver |
TOSHIBA |
| 718 |
MP4211 |
Power MOS FET Module Silicon N Channel MOS Type (L2-pi-MOSV 4 in 1) High Power, High Speed Switching Applications For Printer Head Pin Driver and Pulse Motor Driver For Solenoid Driver |
TOSHIBA |
| 719 |
MP4212 |
Power MOS FET Module Silicon N&P Channel MOS Type (L2-pi-MOSV 4 in 1) High Power High Speed Switching Applications H-Switch Driver |
TOSHIBA |
| 720 |
MP4410 |
Power MOS FET Module Silicon N Channel MOS Type (L2-pi-MOSV 4 in 1) High Power, High Speed Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. |
TOSHIBA |
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