| No. |
Part Name |
Description |
Manufacturer |
| 751 |
PS2503-4 |
LOW INPUT CURRENT, HIGH SPEED SWITCHING MULTI PHOTOCOUPLER SERIES |
NEC |
| 752 |
PS2503L-1 |
LOW INPUT CURRENT, HIGH SPEED SWITCHING MULTI PHOTOCOUPLER SERIES |
NEC |
| 753 |
PS2503L-2 |
LOW INPUT CURRENT, HIGH SPEED SWITCHING MULTI PHOTOCOUPLER SERIES |
NEC |
| 754 |
PS2503L-4 |
LOW INPUT CURRENT, HIGH SPEED SWITCHING MULTI PHOTOCOUPLER SERIES |
NEC |
| 755 |
Q62702-A1025 |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 756 |
Q62702-A1030 |
Silicon Switching Diode Array (For high speed switching applications Common cathode) |
Siemens |
| 757 |
Q62702-A1031 |
Silicon Switching Diode Array (For high speed switching applications Common anode) |
Siemens |
| 758 |
Q62702-A1036 |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 759 |
Q62702-A1037 |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 760 |
Q62702-A1038 |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 761 |
Q62702-A1039 |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 762 |
Q62702-A1046 |
Silicon Schottky Diode (For mixer applications in the VHF/UHF range For high speed switching) |
Siemens |
| 763 |
Q62702-A1050 |
Silicon Switching Diode (For high speed switching applications) |
Siemens |
| 764 |
Q62702-A1051 |
Silicon Switching Diode Array (Connected in series For high speed switching applications) |
Siemens |
| 765 |
Q62702-A1097 |
Silicon Switching Diode Array (For high speed switching applications Common cathode) |
Siemens |
| 766 |
Q62702-A1211 |
Silicon PIN Diode (PIN diode for high speed switching of RF signals, Low forward resistance, small capacitance small inductance) |
Siemens |
| 767 |
Q62702-A1261 |
Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 768 |
Q62702-A1267 |
Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 769 |
Q62702-A1268 |
Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 770 |
RM100 |
HIGH SPEED SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 771 |
RM100C1A-XXF |
FAST RECOVERY DIODE MODULES HIGH SPEED SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 772 |
RM100CA |
FAST RECOVERY DIODE MODULES HIGH SPEED SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 773 |
RM100CA-XXF |
HIGH SPEED SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 774 |
RM100HA-XXF |
FAST RECOVERY DIODE MODULES HIGH SPEED SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 775 |
RM20 |
HIGH SPEED SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 776 |
RM200DA-20F |
FAST RECOVERY DIODE MODULES HIGH SPEED SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 777 |
RM200DA-24F |
FAST RECOVERY DIODE MODULES HIGH SPEED SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 778 |
RM200HA-20F |
FAST RECOVERY DIODE MODULES HIGH SPEED SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 779 |
RM200HA-24F |
FAST RECOVERY DIODE MODULES HIGH SPEED SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 780 |
RM20C1A-XXF |
FAST RECOVERY DIODE MODULES HIGH SPEED SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
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