| No. |
Part Name |
Description |
Manufacturer |
| 661 |
KA224 |
Diode for very high speed switching circuits |
Tesla Elektronicke |
| 662 |
KA225 |
Diode for very high speed switching circuits |
Tesla Elektronicke |
| 663 |
KAY11 |
Diode for very high speed switching circuits |
Tesla Elektronicke |
| 664 |
KAY12 |
Diode for very high speed switching circuits |
Tesla Elektronicke |
| 665 |
KAY13 |
Diode for very high speed switching circuits |
Tesla Elektronicke |
| 666 |
KAY14 |
Diode for very high speed switching circuits |
Tesla Elektronicke |
| 667 |
KAY15 |
Diode for very high speed switching circuits |
Tesla Elektronicke |
| 668 |
KAY20 |
Diode for very high speed switching circuits |
Tesla Elektronicke |
| 669 |
KAY21 |
Diode for very high speed switching circuits |
Tesla Elektronicke |
| 670 |
KDS200 |
SILICON EPITAXIAL PLANAR DIODE (ULTRA HIGH SPEED SWITCHING) |
Korea Electronics (KEC) |
| 671 |
KDS201 |
SILICON EPITAXIAL PLANAR DIODE (ULTRA HIGH SPEED SWITCHING) |
Korea Electronics (KEC) |
| 672 |
KS206T |
Diode for very high speed switching circuits |
Tesla Elektronicke |
| 673 |
KSC2517 |
NPN (HIGH SPEED SWITCHING INDUSTRIAL USE) |
Samsung Electronic |
| 674 |
KSY21 |
NPN transistor for high speed switching circuits |
Tesla Elektronicke |
| 675 |
KSY62 |
NPN transistor for high speed switching circuits |
Tesla Elektronicke |
| 676 |
KSY62A |
NPN transistor for high speed switching circuits |
Tesla Elektronicke |
| 677 |
KSY62B |
NPN transistor for high speed switching circuits |
Tesla Elektronicke |
| 678 |
KSY63 |
NPN transistor for high speed switching circuits |
Tesla Elektronicke |
| 679 |
KSY71 |
NPN transistor for very high speed switching circuits |
Tesla Elektronicke |
| 680 |
KSY72 |
NPN transistor for very high speed switching circuits |
Tesla Elektronicke |
| 681 |
KTK5132 |
N CHANNEL MOS FIELD EFFECT TRANSISTOR (ULTRA-HIGH SPEED SWITCHING/ ANALOG SWITCH) |
Korea Electronics (KEC) |
| 682 |
KTK5162 |
N CHANNEL MOS FIELD EFFECT TRANSISTOR (ULTRA-HIGH SPEED SWITCHING/ ANALOG SWITCH) |
Korea Electronics (KEC) |
| 683 |
KTX301 |
EPITAXIAL PLANAR PNP TRANSISTOR SILICON EPITAXIAL PLANAR TYPE DIODE (GENERAL PURPOSE/ ULTRA HIGH SPEED SWITCHING) |
Korea Electronics (KEC) |
| 684 |
MC2831 |
Small signal diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 75 V. |
Isahaya Electronics Corporation |
| 685 |
MC2832 |
Small signal diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 75 V. |
Isahaya Electronics Corporation |
| 686 |
MC2833 |
Small signal diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 75 V. |
Isahaya Electronics Corporation |
| 687 |
MC2834 |
Small signal diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 75 V. |
Isahaya Electronics Corporation |
| 688 |
MC2837 |
Small signal diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 85 V. |
Isahaya Electronics Corporation |
| 689 |
MC2838 |
Small signal diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 75 V. |
Isahaya Electronics Corporation |
| 690 |
MC2839 |
Small signal diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 85 V. |
Isahaya Electronics Corporation |
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