| No. |
Part Name |
Description |
Manufacturer |
| 751 |
2SB889F |
MEDIUM POWER TRANSISTOR(-80V, -0.7A) |
Unknow |
| 752 |
2SB891F |
Medium Power Transistor |
ROHM |
| 753 |
2SB899F |
MEDIUM POWER TRANSISTOR |
ROHM |
| 754 |
2SB911M |
Medium power Transistor(-32V/ -2A) |
ROHM |
| 755 |
2SC1008 |
Medium Power Amplifiers and Switches |
Unknow |
| 756 |
2SC1008 |
Low frequency amplifier medium speed switching. Collector-base voltage Vcbo = 80V. Collector-emitter voltage Vceo = 60V. Emitter-base voltage Vebo = 8V. Collector dissipation Pc(max) = 800mW. Collector current Ic = 700mA. |
USHA India LTD |
| 757 |
2SC1175 |
Medium Power Amplifiers and Switches |
Unknow |
| 758 |
2SC1209 |
Medium Power Amplifiers and Switches |
Unknow |
| 759 |
2SC1252 |
NPN medium power UHF-VHF transistor (This datasheet of NE74114 is also the datasheet of 2SC1252, see the Electrical Characteristics table) |
NEC |
| 760 |
2SC1347 |
Medium Power Amplifiers and Switches |
Unknow |
| 761 |
2SC1365 |
NPN medium power UHF-VHF transistor (This datasheet of NE74113 is also the datasheet of 2SC1365, see the Electrical Characteristics table) |
NEC |
| 762 |
2SC1426 |
NPN medium power UHF-VHF transistor (This datasheet of NE416 series is also the datasheet of 2SC1426, see the Electrical Characteristics table) |
NEC |
| 763 |
2SC151H |
Silicon NPN Epitaxial LTP Transistor, intended for use in RF Amplifier, Medium Speed Switching |
Hitachi Semiconductor |
| 764 |
2SC152H |
Silicon NPN Epitaxial LTP Transistor, intended for use in RF Amplifier, Medium Speed Switching |
Hitachi Semiconductor |
| 765 |
2SC1600 |
NPN medium power microwave transistor (This datasheet of NE57510 is also the datasheet of 2SC1600-Grd D, see the Electrical Characteristics table) |
NEC |
| 766 |
2SC1626 |
Silicon NPN epitaxial medium power transistor |
TOSHIBA |
| 767 |
2SC1652 |
Medium Power Amp. Epitaxial Planar NPN Silicon Transistors |
ROHM |
| 768 |
2SC1672 |
Medium Power Amplifiers and Switches |
Unknow |
| 769 |
2SC1707 |
LOW FREQUENCY AMPLIFIER MEDIUM SPEED SWITCHING |
Hitachi Semiconductor |
| 770 |
2SC1707A |
LOW FREQUENCY AMPLIFIER MEDIUM SPEED SWITCHING |
Hitachi Semiconductor |
| 771 |
2SC1707AH |
LOW FREQUENCY AMPLIFIER MEDIUM SPEED SWITCHING |
Hitachi Semiconductor |
| 772 |
2SC1781 |
HIGH FREQUENCY AMPLIFIER MEDIUM SPEED SWITCHING |
Hitachi Semiconductor |
| 773 |
2SC1781H |
HIGH FREQUENCY AMPLIFIER MEDIUM SPEED SWITCHING |
Hitachi Semiconductor |
| 774 |
2SC1788 |
Medium Power Amplifiers and Switches |
Unknow |
| 775 |
2SC1851 |
Medium Power Amplifiers and Switches |
Unknow |
| 776 |
2SC2001 |
Medium Power Amplifiers and Switches |
Unknow |
| 777 |
2SC2025 |
NPN medium power UHF-VHF transistor (This datasheet of NE416 series is also the datasheet of 2SC2025, see the Electrical Characteristics table) |
NEC |
| 778 |
2SC2500 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 779 |
2SC282H |
Silicon NPN Epitaxial LTP, intended for use in Medium Speed Switching, High Voltage Switching |
Hitachi Semiconductor |
| 780 |
2SC284H |
Silicon NPN Epitaxial LTP, intended for use in Medium Speed Switching, High Voltage Switching |
Hitachi Semiconductor |
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