| No. |
Part Name |
Description |
Manufacturer |
| 871 |
2SB765 |
MEDIUM SPEED AND POWER SWITCHING COMPLEMENTARY PAIR WITH 2SD864K |
Hitachi Semiconductor |
| 872 |
2SB765K |
MEDIUM SPEED AND POWER SWITCHING COMPLEMENTARY PAIR WITH 2SD864K |
Hitachi Semiconductor |
| 873 |
2SB772 |
MEDIUM POWER LOW VOLTAGE TRANSISTOR |
Unisonic Technologies |
| 874 |
2SB772S |
MEDIUM POWER LOW VOLTAGE TRANSISTOR |
Unisonic Technologies |
| 875 |
2SB822 |
Medium power Transistor(-32V/ -2A) |
ROHM |
| 876 |
2SB889F |
MEDIUM POWER TRANSISTOR(-80V, -0.7A) |
Unknow |
| 877 |
2SB891F |
Medium Power Transistor |
ROHM |
| 878 |
2SB899F |
MEDIUM POWER TRANSISTOR |
ROHM |
| 879 |
2SB911M |
Medium power Transistor(-32V/ -2A) |
ROHM |
| 880 |
2SC1008 |
Medium Power Amplifiers and Switches |
Unknow |
| 881 |
2SC1008 |
Low frequency amplifier medium speed switching. Collector-base voltage Vcbo = 80V. Collector-emitter voltage Vceo = 60V. Emitter-base voltage Vebo = 8V. Collector dissipation Pc(max) = 800mW. Collector current Ic = 700mA. |
USHA India LTD |
| 882 |
2SC1175 |
Medium Power Amplifiers and Switches |
Unknow |
| 883 |
2SC1209 |
Medium Power Amplifiers and Switches |
Unknow |
| 884 |
2SC1252 |
NPN medium power UHF-VHF transistor (This datasheet of NE74114 is also the datasheet of 2SC1252, see the Electrical Characteristics table) |
NEC |
| 885 |
2SC1347 |
Medium Power Amplifiers and Switches |
Unknow |
| 886 |
2SC1365 |
NPN medium power UHF-VHF transistor (This datasheet of NE74113 is also the datasheet of 2SC1365, see the Electrical Characteristics table) |
NEC |
| 887 |
2SC1426 |
NPN medium power UHF-VHF transistor (This datasheet of NE416 series is also the datasheet of 2SC1426, see the Electrical Characteristics table) |
NEC |
| 888 |
2SC151H |
Silicon NPN Epitaxial LTP Transistor, intended for use in RF Amplifier, Medium Speed Switching |
Hitachi Semiconductor |
| 889 |
2SC152H |
Silicon NPN Epitaxial LTP Transistor, intended for use in RF Amplifier, Medium Speed Switching |
Hitachi Semiconductor |
| 890 |
2SC1600 |
NPN medium power microwave transistor (This datasheet of NE57510 is also the datasheet of 2SC1600-Grd D, see the Electrical Characteristics table) |
NEC |
| 891 |
2SC1626 |
Silicon NPN epitaxial medium power transistor |
TOSHIBA |
| 892 |
2SC1652 |
Medium Power Amp. Epitaxial Planar NPN Silicon Transistors |
ROHM |
| 893 |
2SC1672 |
Medium Power Amplifiers and Switches |
Unknow |
| 894 |
2SC1707 |
LOW FREQUENCY AMPLIFIER MEDIUM SPEED SWITCHING |
Hitachi Semiconductor |
| 895 |
2SC1707A |
LOW FREQUENCY AMPLIFIER MEDIUM SPEED SWITCHING |
Hitachi Semiconductor |
| 896 |
2SC1707AH |
LOW FREQUENCY AMPLIFIER MEDIUM SPEED SWITCHING |
Hitachi Semiconductor |
| 897 |
2SC1781 |
HIGH FREQUENCY AMPLIFIER MEDIUM SPEED SWITCHING |
Hitachi Semiconductor |
| 898 |
2SC1781H |
HIGH FREQUENCY AMPLIFIER MEDIUM SPEED SWITCHING |
Hitachi Semiconductor |
| 899 |
2SC1788 |
Medium Power Amplifiers and Switches |
Unknow |
| 900 |
2SC1851 |
Medium Power Amplifiers and Switches |
Unknow |
| | | |
