| No. |
Part Name |
Description |
Manufacturer |
| 781 |
2SC2952 |
NPN medium power microwave transistor (This datasheet of NE24615 is also the datasheet of 2SC2952, see the Electrical Characteristics table) |
NEC |
| 782 |
2SC2982 |
Transistor Silicon NPN Epitaxial Type (PCT process) Storobo Flash Applications Medium Power Amplifier Applications |
TOSHIBA |
| 783 |
2SC3072 |
Transistor Silicon NPN Epitaxial Type (PCT process) Strobe Flash Applications Medium Power Amplifier Applications |
TOSHIBA |
| 784 |
2SC3269 |
Silicon NPN transistor for strobo flash applications and medium power amplifier applications |
TOSHIBA |
| 785 |
2SC3279 |
Transistor Silicon NPN Epitaxial Type (PCT process) Strobe Flash Applications Medium Power Amplifier Applications |
TOSHIBA |
| 786 |
2SC3419 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) MEDIUM POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 787 |
2SC3420 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) STROBO FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 788 |
2SC367 |
Low Frequency Medium Power Transistor |
TOSHIBA |
| 789 |
2SC3670 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) STOROBO FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 790 |
2SC3671 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 791 |
2SC4015 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W) |
ROHM |
| 792 |
2SC4037 |
Medium Power Amp. Epitaxial Planar NPN Silicon Transistors |
ROHM |
| 793 |
2SC4132 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W) |
ROHM |
| 794 |
2SC4258 |
FOR HIGH FREQUENCY, MEDIUM FREQUENCY AMPLIFY APPLICATION |
Isahaya Electronics Corporation |
| 795 |
2SC4505 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W) |
ROHM |
| 796 |
2SC454 |
Silicon NPN Epitaxial LTP Transistor, intended for use in MW Frequency Converter, 455kHz Intermediate Frequency Amplifier |
Hitachi Semiconductor |
| 797 |
2SC4620 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W) |
ROHM |
| 798 |
2SC4672 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W) |
ROHM |
| 799 |
2SC4681 |
Transistor Silicon NPN Epitaxial Type Strobe Flash Applications Medium Power Amplifier Applications |
TOSHIBA |
| 800 |
2SC4682 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 801 |
2SC4684 |
Transistor Silicon NPN Epitaxial Type Strobe Flash Applications Medium Power Amplifier Applications |
TOSHIBA |
| 802 |
2SC4781 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) STROBO FLASH AND MEDIUM POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 803 |
2SC484 |
Silicon NPN triple diffused MESA medium power transistor |
TOSHIBA |
| 804 |
2SC485 |
Silicon NPN triple diffused MESA medium power transistor |
TOSHIBA |
| 805 |
2SC486 |
Silicon NPN triple diffused MESA medium power transistor |
TOSHIBA |
| 806 |
2SC495 |
Silicon NPN epitaxial medium power transistor |
TOSHIBA |
| 807 |
2SC496 |
Silicon NPN epitaxial medium power transistor |
TOSHIBA |
| 808 |
2SC497 |
Silicon NPN epitaxial planar medium power transistor |
TOSHIBA |
| 809 |
2SC498 |
Silicon NPN epitaxial planar medium power transistor |
TOSHIBA |
| 810 |
2SC5001 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W) |
ROHM |
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