No. |
Part Name |
Description |
Manufacturer |
811 |
2SC5030 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE STROBE FLASH AND MEDIUM POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
812 |
2SC5053 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W) |
ROHM |
813 |
2SC5060 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W) |
ROHM |
814 |
2SC509 |
Silicon NPN epitaxial planar medium power transistor, complementary to 2SA509 |
TOSHIBA |
815 |
2SC509G |
Silicon NPN epitaxial planar medium power transistor |
TOSHIBA |
816 |
2SC5103 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W) |
ROHM |
817 |
2SC515 |
Low Frequency Medium Power Transistor |
TOSHIBA |
818 |
2SC5161 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W) |
ROHM |
819 |
2SC5342 |
NPN Silicon Transistor (Medium power amplifier) |
AUK Corp |
820 |
2SC5342M |
NPN Silicon Transistor (Medium power amplifier) |
AUK Corp |
821 |
2SC5342S |
NPN Silicon Transistor (Medium power amplifier) |
AUK Corp |
822 |
2SC5342SF |
NPN Silicon Transistor (Medium power amplifier) |
AUK Corp |
823 |
2SC5342U |
NPN Silicon Transistor (Medium power amplifier) |
AUK Corp |
824 |
2SC5342UF |
NPN Silicon Transistor (Medium power amplifier) |
AUK Corp |
825 |
2SC5347 |
NPN Epitaxial Planar Silicon Transistor High-Frequency Semi-Power Output Stage, Low-Noise Medium Output Amplifiers Applications |
SANYO |
826 |
2SC5551 |
NPN Epitaxial Planar Silicon Transistor High-Frequency Medium-Output Amplifier Applications |
SANYO |
827 |
2SC5590 |
TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE HORIZONTAL DEFLECTION OUTPUT FOR SUPER HIGH RESOLUTION DISPLAY, COLOR TV FOR MULTI .MEDIA & HDTV HIGH SPEED SWITCHING APPLICATIONS |
TOSHIBA |
828 |
2SC5720 |
Transistor Silicon NPN Epitaxial Planar Type MEDIUM POWER AMPLIFIER APPLICATIONS STOROBO FLASH APPLICATIONS |
TOSHIBA |
829 |
2SC5730 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W) |
ROHM |
830 |
2SC5765 |
Transistor Silicon NPN Epitaxial Planar Type MEDIUM POWER AMPLIFIER APPLICATIONS STOROBO FLASH APPLICATIONS |
TOSHIBA |
831 |
2SC5824 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W) |
ROHM |
832 |
2SC5866 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W) |
ROHM |
833 |
2SC5916 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W) |
ROHM |
834 |
2SC708AH |
Silicon NPN Triple Diffused Transistor, intended for use in Medium Power Amplifier, Medium Power Switching |
Hitachi Semiconductor |
835 |
2SC708AH |
Silicon NPN Triple Diffused Transistor, intended for use in Medium Power Amplifier, Medium Power Switching |
Hitachi Semiconductor |
836 |
2SC708H |
Silicon NPN Triple Diffused Transistor, intended for use in Medium Power Amplifier, Medium Power Switching |
Hitachi Semiconductor |
837 |
2SC708H |
Silicon NPN Triple Diffused Transistor, intended for use in Medium Power Amplifier, Medium Power Switching |
Hitachi Semiconductor |
838 |
2SC830H |
Silicon NPN Triple Diffused Transistor, intended for use in Medium Power Output, Medium Power Switching |
Hitachi Semiconductor |
839 |
2SC830H |
Silicon NPN Triple Diffused Transistor, intended for use in Medium Power Output, Medium Power Switching |
Hitachi Semiconductor |
840 |
2SC89H |
Germanium NPN Alloyed Junction Transistor, intended for use in Medium Speed Switching |
Hitachi Semiconductor |
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