| No. |
Part Name |
Description |
Manufacturer |
| 901 |
2SC2001 |
Medium Power Amplifiers and Switches |
Unknow |
| 902 |
2SC2025 |
NPN medium power UHF-VHF transistor (This datasheet of NE416 series is also the datasheet of 2SC2025, see the Electrical Characteristics table) |
NEC |
| 903 |
2SC2500 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 904 |
2SC282H |
Silicon NPN Epitaxial LTP, intended for use in Medium Speed Switching, High Voltage Switching |
Hitachi Semiconductor |
| 905 |
2SC284H |
Silicon NPN Epitaxial LTP, intended for use in Medium Speed Switching, High Voltage Switching |
Hitachi Semiconductor |
| 906 |
2SC2952 |
NPN medium power microwave transistor (This datasheet of NE24615 is also the datasheet of 2SC2952, see the Electrical Characteristics table) |
NEC |
| 907 |
2SC2982 |
Transistor Silicon NPN Epitaxial Type (PCT process) Storobo Flash Applications Medium Power Amplifier Applications |
TOSHIBA |
| 908 |
2SC3072 |
Transistor Silicon NPN Epitaxial Type (PCT process) Strobe Flash Applications Medium Power Amplifier Applications |
TOSHIBA |
| 909 |
2SC3269 |
Silicon NPN transistor for strobo flash applications and medium power amplifier applications |
TOSHIBA |
| 910 |
2SC3279 |
Transistor Silicon NPN Epitaxial Type (PCT process) Strobe Flash Applications Medium Power Amplifier Applications |
TOSHIBA |
| 911 |
2SC3419 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) MEDIUM POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 912 |
2SC3420 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) STROBO FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 913 |
2SC367 |
Low Frequency Medium Power Transistor |
TOSHIBA |
| 914 |
2SC3670 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) STOROBO FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 915 |
2SC3671 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 916 |
2SC4015 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W) |
ROHM |
| 917 |
2SC4037 |
Medium Power Amp. Epitaxial Planar NPN Silicon Transistors |
ROHM |
| 918 |
2SC4132 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W) |
ROHM |
| 919 |
2SC4258 |
FOR HIGH FREQUENCY, MEDIUM FREQUENCY AMPLIFY APPLICATION |
Isahaya Electronics Corporation |
| 920 |
2SC4505 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W) |
ROHM |
| 921 |
2SC454 |
Silicon NPN Epitaxial LTP Transistor, intended for use in MW Frequency Converter, 455kHz Intermediate Frequency Amplifier |
Hitachi Semiconductor |
| 922 |
2SC4620 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W) |
ROHM |
| 923 |
2SC4672 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W) |
ROHM |
| 924 |
2SC4681 |
Transistor Silicon NPN Epitaxial Type Strobe Flash Applications Medium Power Amplifier Applications |
TOSHIBA |
| 925 |
2SC4682 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 926 |
2SC4684 |
Transistor Silicon NPN Epitaxial Type Strobe Flash Applications Medium Power Amplifier Applications |
TOSHIBA |
| 927 |
2SC4781 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) STROBO FLASH AND MEDIUM POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 928 |
2SC484 |
Silicon NPN triple diffused MESA medium power transistor |
TOSHIBA |
| 929 |
2SC485 |
Silicon NPN triple diffused MESA medium power transistor |
TOSHIBA |
| 930 |
2SC486 |
Silicon NPN triple diffused MESA medium power transistor |
TOSHIBA |
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