| No. |
Part Name |
Description |
Manufacturer |
| 1 |
0801-12 |
Marking for NE080190-12 part number, 90 NEC package |
NEC |
| 2 |
0804-12 |
Marking for NE080490-12 part number, 90 NEC package |
NEC |
| 3 |
08090 |
LDMOS RF Power Field Effect Transistor 90 W, 869-960 MHz |
Infineon |
| 4 |
0810-12 |
Marking for NE081090-12 part number, 90 NEC package |
NEC |
| 5 |
1.5FMCJ100 |
Surface mount transient voltage suppressor (TVS). 1500W peak power, 5.0W steady state. Breakdown voltage 90.0V(min), 110V(max). For bidirectional use C or CA suffix. |
Rectron Semiconductor |
| 6 |
1.5KE100 |
GPP transient voltage suppressor (TVS diode). 1500W peak power, 5.0W steady state. Breakdown voltage 90.0V(min), 110V(max). For bidirectional use C or CA suffix. |
Rectron Semiconductor |
| 7 |
1.5KE100C |
Transient voltage suppressor. 1500 W. Breakdown voltage 90.0 V(min), 110 V(max). Test current 1.0 mA. |
Shanghai Sunrise Electronics |
| 8 |
10SI9 |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, cathode to case 10A 900V |
IPRS Baneasa |
| 9 |
10SI9R |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, anode to case 10A 900V |
IPRS Baneasa |
| 10 |
1496-3 |
24V 55W Class C epitaxial silicon NPN planar transistor 900-960MHz |
SGS Thomson Microelectronics |
| 11 |
1504-90E |
Delay 90 +/-4.5 ns, Fixed dip delay line Td/Tr=5 |
Data Delay Devices Inc |
| 12 |
15041-ECG |
Surge arrester (gas filled). Nominal breakdown voltage 90VDC |
NTE Electronics |
| 13 |
1505-90A |
Delay 90 +/-5 ns, 5-TAP SIP delay line Td/Tr=3 |
Data Delay Devices Inc |
| 14 |
1513-90Y |
Delay 90 +/-4.5 ns, fixed SIP delay line Td/Tr=5 |
Data Delay Devices Inc |
| 15 |
1514-90Y |
Delay 90 +/-4.5 ns, fixed SIP delay line Td/Tr=5 |
Data Delay Devices Inc |
| 16 |
1515-90A |
Delay 90 +/-4.5 ns, fixed SIP delay line Td/Tr=10 |
Data Delay Devices Inc |
| 17 |
15KP90 |
Diode TVS Single Uni-Dir 90V 15KW 2-Pin Case 5A |
New Jersey Semiconductor |
| 18 |
15KP90A |
Diode TVS Single Uni-Dir 90V 15KW 2-Pin Case 5A |
New Jersey Semiconductor |
| 19 |
15KP90C |
Diode TVS Single Bi-Dir 90V 15KW 2-Pin Case 5A |
New Jersey Semiconductor |
| 20 |
15KP90CA |
Diode TVS Single Bi-Dir 90V 15KW 2-Pin Case 5A |
New Jersey Semiconductor |
| 21 |
15KPA90 |
Diode TVS Single Uni-Dir 90V 15KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 22 |
15KPA90A |
Diode TVS Single Uni-Dir 90V 15KW 2-Pin Case P600 Tape and Ammo |
New Jersey Semiconductor |
| 23 |
15KPA90C |
Diode TVS Single Bi-Dir 90V 15KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 24 |
15KPA90CA |
Diode TVS Single Bi-Dir 90V 15KW 2-Pin Case P600 Tape and Ammo |
New Jersey Semiconductor |
| 25 |
1N191 |
Gold Bonded Germanium Diode(Peak Inverse Voltage : 90V, Peak Forward Current : 500mA) |
BKC International Electronics |
| 26 |
1N191 |
Diode Switching 90V 0.15A |
New Jersey Semiconductor |
| 27 |
1N3173 |
Diode Switching 900V 240A 2-Pin DO-9 |
New Jersey Semiconductor |
| 28 |
1N3272 |
Rectifier Diode 900V 160A |
Motorola |
| 29 |
1N3272 |
Diode 900V 275A 2-Pin DO-9 |
New Jersey Semiconductor |
| 30 |
1N3368 |
Rectifier Diode 900V 3A |
Motorola |
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