| No. |
Part Name |
Description |
Manufacturer |
| 2791 |
IRF241 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 18A. |
General Electric Solid State |
| 2792 |
IRF241 |
MOSPOWER N-Channel Enhancement Mode Transistor 150V 18A |
Siliconix |
| 2793 |
IRF242 |
MOSPOWER N-Channel Enhancement Mode Transistor 200V 16A |
Siliconix |
| 2794 |
IRF243 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 16A. |
General Electric Solid State |
| 2795 |
IRF243 |
MOSPOWER N-Channel Enhancement Mode Transistor 150V 16A |
Siliconix |
| 2796 |
IRF250 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 30A. |
General Electric Solid State |
| 2797 |
IRF250 |
MOSPOWER N-Channel Enhancement Mode Transistor 200V 30A |
Siliconix |
| 2798 |
IRF251 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 30A. |
General Electric Solid State |
| 2799 |
IRF251 |
MOSPOWER N-Channel Enhancement Mode Transistor 150V 30A |
Siliconix |
| 2800 |
IRF252 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 25A. |
General Electric Solid State |
| 2801 |
IRF252 |
MOSPOWER N-Channel Enhancement Mode Transistor 200V 25A |
Siliconix |
| 2802 |
IRF253 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 25A. |
General Electric Solid State |
| 2803 |
IRF253 |
MOSPOWER N-Channel Enhancement Mode Transistor 150V 25A |
Siliconix |
| 2804 |
IRF320 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 3.0A. |
General Electric Solid State |
| 2805 |
IRF321 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 3.0A. |
General Electric Solid State |
| 2806 |
IRF322 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 2.5A. |
General Electric Solid State |
| 2807 |
IRF323 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 2.5A. |
General Electric Solid State |
| 2808 |
IRF330 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 5.5A. |
General Electric Solid State |
| 2809 |
IRF330 |
MOSPOWER N-Channel Enhancement Mode Transistor 400V 5.5A |
Siliconix |
| 2810 |
IRF331 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 5.5A. |
General Electric Solid State |
| 2811 |
IRF331 |
MOSPOWER N-Channel Enhancement Mode Transistor 350V 5.5A |
Siliconix |
| 2812 |
IRF332 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 4.5A. |
General Electric Solid State |
| 2813 |
IRF332 |
MOSPOWER N-Channel Enhancement Mode Transistor 400V 4.5A |
Siliconix |
| 2814 |
IRF333 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 4.5A. |
General Electric Solid State |
| 2815 |
IRF333 |
MOSPOWER N-Channel Enhancement Mode Transistor 350V 4.5A |
Siliconix |
| 2816 |
IRF340 |
MOSPOWER N-Channel Enhancement Mode Transistor 400V 10A |
Siliconix |
| 2817 |
IRF341 |
MOSPOWER N-Channel Enhancement Mode Transistor 350V 10A |
Siliconix |
| 2818 |
IRF342 |
MOSPOWER N-Channel Enhancement Mode Transistor 400V 8A |
Siliconix |
| 2819 |
IRF343 |
MOSPOWER N-Channel Enhancement Mode Transistor 350V 8A |
Siliconix |
| 2820 |
IRF350 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 15A. |
General Electric Solid State |
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