| No. |
Part Name |
Description |
Manufacturer |
| 2851 |
IRF453 |
MOSPOWER N-Channel Enhancement Mode Transistor 450V 12A |
Siliconix |
| 2852 |
IRF460 |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
SemeLAB |
| 2853 |
IRF510 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 4.0A. |
General Electric Solid State |
| 2854 |
IRF510 |
MOSPOWER N-Channel Enhancement Mode Transistor 100V 4A |
Siliconix |
| 2855 |
IRF510 |
N-Channel Enhancement-Mode Vertical DMOS Power FETs |
Supertex Inc |
| 2856 |
IRF511 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 4.0A. |
General Electric Solid State |
| 2857 |
IRF511 |
MOSPOWER N-Channel Enhancement Mode Transistor 60V 4A |
Siliconix |
| 2858 |
IRF511 |
N-Channel Enhancement-Mode Vertical DMOS Power FETs |
Supertex Inc |
| 2859 |
IRF512 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 3.5A. |
General Electric Solid State |
| 2860 |
IRF512 |
MOSPOWER N-Channel Enhancement Mode Transistor 100V 3.5A |
Siliconix |
| 2861 |
IRF512 |
N-Channel Enhancement-Mode Vertical DMOS Power FETs |
Supertex Inc |
| 2862 |
IRF513 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 3.5A. |
General Electric Solid State |
| 2863 |
IRF513 |
MOSPOWER N-Channel Enhancement Mode Transistor 60V 3.5A |
Siliconix |
| 2864 |
IRF513 |
N-Channel Enhancement-Mode Vertical DMOS Power FETs |
Supertex Inc |
| 2865 |
IRF520 |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS |
SGS Thomson Microelectronics |
| 2866 |
IRF520 |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS |
SGS Thomson Microelectronics |
| 2867 |
IRF520 |
MOSPOWER N-Channel Enhancement Mode Transistor 100V 8A |
Siliconix |
| 2868 |
IRF520 |
N - CHANNEL ENHANCEMENT MODE VERTICAL DMOS POWER FETs |
Supertex Inc |
| 2869 |
IRF520FI |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS |
SGS Thomson Microelectronics |
| 2870 |
IRF520FI |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS |
SGS Thomson Microelectronics |
| 2871 |
IRF520FI |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS |
ST Microelectronics |
| 2872 |
IRF521 |
MOSPOWER N-Channel Enhancement Mode Transistor 60V 8A |
Siliconix |
| 2873 |
IRF521 |
N - CHANNEL ENHANCEMENT MODE VERTICAL DMOS POWER FETs |
Supertex Inc |
| 2874 |
IRF522 |
MOSPOWER N-Channel Enhancement Mode Transistor 100V 7A |
Siliconix |
| 2875 |
IRF522 |
N - CHANNEL ENHANCEMENT MODE VERTICAL DMOS POWER FETs |
Supertex Inc |
| 2876 |
IRF523 |
MOSPOWER N-Channel Enhancement Mode Transistor 60V 7A |
Siliconix |
| 2877 |
IRF523 |
N - CHANNEL ENHANCEMENT MODE VERTICAL DMOS POWER FETs |
Supertex Inc |
| 2878 |
IRF530 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 14A. |
General Electric Solid State |
| 2879 |
IRF530 |
N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR |
Motorola |
| 2880 |
IRF530 |
N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
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