| No. |
Part Name |
Description |
Manufacturer |
| 2911 |
IRF610 |
MOSPOWER N-Channel Enhancement Mode Transistor 200V 2.5A |
Siliconix |
| 2912 |
IRF611 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 2.5A. |
General Electric Solid State |
| 2913 |
IRF611 |
MOSPOWER N-Channel Enhancement Mode Transistor 150V 2.5A |
Siliconix |
| 2914 |
IRF612 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 2.0A. |
General Electric Solid State |
| 2915 |
IRF612 |
MOSPOWER N-Channel Enhancement Mode Transistor 200V 2A |
Siliconix |
| 2916 |
IRF613 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 2.0A. |
General Electric Solid State |
| 2917 |
IRF613 |
MOSPOWER N-Channel Enhancement Mode Transistor 150V 2A |
Siliconix |
| 2918 |
IRF620 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 5.0A. |
General Electric Solid State |
| 2919 |
IRF620 |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS |
SGS Thomson Microelectronics |
| 2920 |
IRF620 |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS |
SGS Thomson Microelectronics |
| 2921 |
IRF620 |
MOSPOWER N-Channel Enhancement Mode Transistor 200V 5A |
Siliconix |
| 2922 |
IRF620FI |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS |
SGS Thomson Microelectronics |
| 2923 |
IRF620FI |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS |
SGS Thomson Microelectronics |
| 2924 |
IRF621 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 5.0A. |
General Electric Solid State |
| 2925 |
IRF621 |
MOSPOWER N-Channel Enhancement Mode Transistor 150V 5A |
Siliconix |
| 2926 |
IRF622 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 4.0A. |
General Electric Solid State |
| 2927 |
IRF622 |
MOSPOWER N-Channel Enhancement Mode Transistor 200V 4A |
Siliconix |
| 2928 |
IRF623 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 4.0A. |
General Electric Solid State |
| 2929 |
IRF623 |
MOSPOWER N-Channel Enhancement Mode Transistor 150V 4A |
Siliconix |
| 2930 |
IRF630 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 9.0A. |
General Electric Solid State |
| 2931 |
IRF630 |
MOSPOWER N-Channel Enhancement Mode Transistor 200V 9A |
Siliconix |
| 2932 |
IRF631 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 9.0A. |
General Electric Solid State |
| 2933 |
IRF631 |
MOSPOWER N-Channel Enhancement Mode Transistor 150V 9A |
Siliconix |
| 2934 |
IRF632 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 8.0A. |
General Electric Solid State |
| 2935 |
IRF632 |
MOSPOWER N-Channel Enhancement Mode Transistor 200V 8A |
Siliconix |
| 2936 |
IRF633 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 8.0A. |
General Electric Solid State |
| 2937 |
IRF633 |
MOSPOWER N-Channel Enhancement Mode Transistor 150V 8A |
Siliconix |
| 2938 |
IRF640 |
MOSPOWER N-Channel Enhancement Mode Transistor 200V 18A |
Siliconix |
| 2939 |
IRF640-D |
Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 2940 |
IRF641 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 18A. |
General Electric Solid State |
| | | |
