| No. |
Part Name |
Description |
Manufacturer |
| 2881 |
IRF530 |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS |
SGS Thomson Microelectronics |
| 2882 |
IRF530 |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
| 2883 |
IRF530 |
MOSPOWER N-Channel Enhancement Mode Transistor 100V 14A |
Siliconix |
| 2884 |
IRF530 |
N-CHANNEL ENHANCEMENT-MODE SILICON GATE |
TRSYS |
| 2885 |
IRF530-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 2886 |
IRF530FI |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
| 2887 |
IRF530FI |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS |
SGS Thomson Microelectronics |
| 2888 |
IRF530FI |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
ST Microelectronics |
| 2889 |
IRF530FP |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
| 2890 |
IRF530FP |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
ST Microelectronics |
| 2891 |
IRF531 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 14A. |
General Electric Solid State |
| 2892 |
IRF531 |
N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR |
Motorola |
| 2893 |
IRF531 |
MOSPOWER N-Channel Enhancement Mode Transistor 60V 14A |
Siliconix |
| 2894 |
IRF531 |
N-Channel Enhancement-Mode Vertical DMOS Power FETs |
Supertex Inc |
| 2895 |
IRF531FI |
N CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS |
ST Microelectronics |
| 2896 |
IRF532 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 12A. |
General Electric Solid State |
| 2897 |
IRF532 |
N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR |
Motorola |
| 2898 |
IRF532 |
MOSPOWER N-Channel Enhancement Mode Transistor 100V 12A |
Siliconix |
| 2899 |
IRF532FI |
N CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS |
ST Microelectronics |
| 2900 |
IRF532FI |
N CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS |
ST Microelectronics |
| 2901 |
IRF533 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 12A. |
General Electric Solid State |
| 2902 |
IRF533 |
N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR |
Motorola |
| 2903 |
IRF533 |
MOSPOWER N-Channel Enhancement Mode Transistor 60V 12A |
Siliconix |
| 2904 |
IRF533FI |
N CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS |
ST Microelectronics |
| 2905 |
IRF540 |
MOSPOWER N-Channel Enhancement Mode Transistor 100V 27A |
Siliconix |
| 2906 |
IRF540-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 2907 |
IRF541 |
MOSPOWER N-Channel Enhancement Mode Transistor 60V 27A |
Siliconix |
| 2908 |
IRF542 |
MOSPOWER N-Channel Enhancement Mode Transistor 100V 24A |
Siliconix |
| 2909 |
IRF543 |
MOSPOWER N-Channel Enhancement Mode Transistor 60V 24A |
Siliconix |
| 2910 |
IRF610 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 2.5A. |
General Electric Solid State |
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