| No. |
Part Name |
Description |
Manufacturer |
| 2821 |
IRF350 |
MOSPOWER N-Channel Enhancement Mode Transistor 400V 15A |
Siliconix |
| 2822 |
IRF351 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 15A. |
General Electric Solid State |
| 2823 |
IRF351 |
MOSPOWER N-Channel Enhancement Mode Transistor 350V 15A |
Siliconix |
| 2824 |
IRF352 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 13A. |
General Electric Solid State |
| 2825 |
IRF352 |
MOSPOWER N-Channel Enhancement Mode Transistor 400V 13A |
Siliconix |
| 2826 |
IRF353 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 13A. |
General Electric Solid State |
| 2827 |
IRF353 |
MOSPOWER N-Channel Enhancement Mode Transistor 350V 13A |
Siliconix |
| 2828 |
IRF420 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 2.5A. |
General Electric Solid State |
| 2829 |
IRF421 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 2.5A. |
General Electric Solid State |
| 2830 |
IRF422 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 2.0A. |
General Electric Solid State |
| 2831 |
IRF423 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 2.0A. |
General Electric Solid State |
| 2832 |
IRF430 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 4.5A. |
General Electric Solid State |
| 2833 |
IRF430 |
MOSPOWER N-Channel Enhancement Mode Transistor 500V 4.5A |
Siliconix |
| 2834 |
IRF431 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.5A. |
General Electric Solid State |
| 2835 |
IRF431 |
MOSPOWER N-Channel Enhancement Mode Transistor 450V 4.5A |
Siliconix |
| 2836 |
IRF432 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 4.0A. |
General Electric Solid State |
| 2837 |
IRF432 |
MOSPOWER N-Channel Enhancement Mode Transistor 500V 4A |
Siliconix |
| 2838 |
IRF433 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.0A. |
General Electric Solid State |
| 2839 |
IRF433 |
MOSPOWER N-Channel Enhancement Mode Transistor 450V 4A |
Siliconix |
| 2840 |
IRF440 |
MOSPOWER N-Channel Enhancement Mode Transistor 500V 8A |
Siliconix |
| 2841 |
IRF441 |
MOSPOWER N-Channel Enhancement Mode Transistor 450V 8A |
Siliconix |
| 2842 |
IRF442 |
MOSPOWER N-Channel Enhancement Mode Transistor 500V 7A |
Siliconix |
| 2843 |
IRF443 |
MOSPOWER N-Channel Enhancement Mode Transistor 450V 7A |
Siliconix |
| 2844 |
IRF450 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 13A. |
General Electric Solid State |
| 2845 |
IRF450 |
MOSPOWER N-Channel Enhancement Mode Transistor 500V 13A |
Siliconix |
| 2846 |
IRF451 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 13A. |
General Electric Solid State |
| 2847 |
IRF451 |
MOSPOWER N-Channel Enhancement Mode Transistor 450V 13A |
Siliconix |
| 2848 |
IRF452 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 12A. |
General Electric Solid State |
| 2849 |
IRF452 |
MOSPOWER N-Channel Enhancement Mode Transistor 500V 12A |
Siliconix |
| 2850 |
IRF453 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 12A. |
General Electric Solid State |
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