| No. |
Part Name |
Description |
Manufacturer |
| 331 |
AWS5506S14 |
GaAs IC SPDT Reflective Switch Positive Control DC - 2.5 GHz |
Anadigics Inc |
| 332 |
BA01202 |
GaAs HBT HYBRID IC |
Mitsubishi Electric Corporation |
| 333 |
BA01203 |
GaAs HBT HYBRID IC |
Mitsubishi Electric Corporation |
| 334 |
BA01207 |
GaAs HBT HYBRID IC |
Mitsubishi Electric Corporation |
| 335 |
BG2011SM |
GaAs Low-Noise, Wideband Amplifier |
ROHM |
| 336 |
BQ2010SN |
Gas Gauge IC |
Texas Instruments |
| 337 |
BQ2010SN-N |
Gas Gauge IC |
Texas Instruments |
| 338 |
BQ2011K |
Gas Gauge IC for High Discharge Rates |
Texas Instruments |
| 339 |
BQ2011KSN |
Gas Gauge IC for High Discharge Rates |
Texas Instruments |
| 340 |
BQ2011KSN-N |
Gas Gauge IC for High Discharge Rates |
Texas Instruments |
| 341 |
BQ2011SN |
Gas Gauge IC for High Discharge Rates |
Texas Instruments |
| 342 |
BQ2011SN-N |
Gas Gauge IC for High Discharge Rates |
Texas Instruments |
| 343 |
BQ2012SN |
Gas Gauge IC With Slow-Charge Control |
Texas Instruments |
| 344 |
BQ2012SNN |
Gas Gauge IC With Slow-Charge Control |
Texas Instruments |
| 345 |
BQ2013HSN |
Gas Gauge IC for Power- Assist Applications |
Texas Instruments |
| 346 |
BQ2014SN |
Gas Gauge IC with External Charge Control |
Texas Instruments |
| 347 |
BQ2014SNN |
Gas Gauge IC with External Charge Control |
Texas Instruments |
| 348 |
BQ2040SN |
Gas Gauge IC With SMBus Interface |
Texas Instruments |
| 349 |
BQ2052SN |
Gas Gauge IC for Lithium Primary Cells |
Texas Instruments |
| 350 |
BQ2092SN |
Gas Gauge IC with SMBus-Like Interface |
Texas Instruments |
| 351 |
BQ2945 |
Gas Gauge IC with SMBus Interface |
Texas Instruments |
| 352 |
BQ2945SN |
Gas Gauge IC with SMBus Interface |
Texas Instruments |
| 353 |
CAY10 |
Gallium arsenide diode, diffused mesa type, for use in microwave parametric amplifiers, frequency multipliers and switches |
Mullard |
| 354 |
CAY10 |
Gallium Arsenide parametric amplifier Varactor Diode |
Philips |
| 355 |
CAY10 |
Gallium arsenide varactor diode |
VALVO |
| 356 |
CF739 |
GaAs FET (N-channel dual-gate GaAs MES FET) |
Siemens |
| 357 |
CF750 |
GaAs MMIC (Biased Dual Gate GaAs FET) |
Siemens |
| 358 |
CFH77 |
GaAs HEMT for low noise front end amp... |
Infineon |
| 359 |
CFY25 |
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) |
Siemens |
| 360 |
CFY25-17 |
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) |
Siemens |
| | | |
