No. |
Part Name |
Description |
Manufacturer |
421 |
CM2P-800L |
Gastube arrester, 800V |
SEMITEC |
422 |
CM3P-230L |
Gastube arrester, 230V |
SEMITEC |
423 |
CM3P-250L |
Gastube arrester, 250V |
SEMITEC |
424 |
CM3P-350L |
Gastube arrester, 350V |
SEMITEC |
425 |
CM3P-400L |
Gastube arrester, 400V |
SEMITEC |
426 |
CMY210 |
GaAs Components |
Infineon |
427 |
CMY211 |
GaAs MMIC |
Infineon |
428 |
CMY213 |
GaAs MMIC |
Infineon |
429 |
CMY91 |
GaAs MMIC (GaAs mixer with integrated IF-amplifier for mobile communication) |
Siemens |
430 |
CQX14 |
GaAs INFRARED EMITTING DIODE |
Fairchild Semiconductor |
431 |
CQX14 |
GAAS INFRARED EMITTING DIODE |
QT Optoelectronics |
432 |
CQX15 |
GaAs INFRARED EMITTING DIODE |
Fairchild Semiconductor |
433 |
CQX15 |
GAAS INFRARED EMITTING DIODE |
QT Optoelectronics |
434 |
CQX16 |
GaAs INFRARED EMITTING DIODE |
Fairchild Semiconductor |
435 |
CQX16 |
GAAS INFRARED EMITTING DIODE |
QT Optoelectronics |
436 |
CQX17 |
GaAs INFRARED EMITTING DIODE |
Fairchild Semiconductor |
437 |
CQX17 |
GAAS INFRARED EMITTING DIODE |
QT Optoelectronics |
438 |
CQX48 |
GaAs Infrared Emitting Diode in Side View Package |
Vishay |
439 |
CQY10 |
Gallium arsenide luminiscence diode, infrared source for high modulation frequencies. The spectral emission is in range of the spectral sensitivity of silicon photoelektronic devices |
AEG-TELEFUNKEN |
440 |
CQY11B |
GaAs infrared LED |
mble |
441 |
CQY24 |
GaAsP red LED |
mble |
442 |
CQY25 |
GaAsP red LED 7 segment numerical indicator |
mble |
443 |
CQY36N |
GaAs Infrared Emitting Diode in Miniature (T-¾) Package |
Vishay |
444 |
CQY37N |
GaAs Infrared Emitting Diode in Miniature (T-¾) Package |
Vishay |
445 |
CR-200 |
Gaussian shaping amplifier |
etc |
446 |
CR-200-100NS |
Gaussian shaping amplifier |
etc |
447 |
CR-200-1US |
Gaussian shaping amplifier |
etc |
448 |
CR-200-250NS |
Gaussian shaping amplifier |
etc |
449 |
CR-200-4US |
Gaussian shaping amplifier |
etc |
450 |
CRD-001 |
Gate Driver Board for 2nd Generation (C2M™) MOSFETs |
Wolfspeed |
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