| No. |
Part Name |
Description |
Manufacturer |
| 391 |
CGY50 |
GaAs MMIC (Single-stage monolithic microwave IC MMICamplifier Cascadable 50 �� gain block) |
Siemens |
| 392 |
CGY52 |
GaAs MMIC (Two stages monolithic microwave IC MMICAmplifier All gold metallisation) |
Siemens |
| 393 |
CGY59 |
GaAs MMIC (Low noise preamplifier for mobile communication PCN, DECT, GSM in 2.7V to 6V systems) |
Siemens |
| 394 |
CGY60 |
GaAs MMIC (Low noise preamplifier for mobile communication PCN, DECT, GSM in 2.7V to 6V systems) |
Siemens |
| 395 |
CGY62 |
GaAs MMIC (Two-stage microwave broadband amplifier IC 50 �� input / output) |
Siemens |
| 396 |
CGY81 |
GaAs MMIC (Tri mode power amplifier for AMPS/ CDMA /TDMA portable cellular phones) |
Siemens |
| 397 |
CGY92 |
GaAs MMIC (Power amplifier for GSM or AMPS application Fully integrated 2 stage amplifier) |
Siemens |
| 398 |
CGY94 |
GaAs MMIC (Power amplifier for GSM or AMPS application Fully integrated 2 stage amplifier Operating voltage range: 2.7 to 6 V) |
Siemens |
| 399 |
CGY96 |
GaAs MMIC (Power amplifier for GSM class 4 phones 3.2 W 35dBm output power at 3.5 V Overall power added efficiency 50%) |
Siemens |
| 400 |
CGY98 |
GaAs MMIC Broadband Power Amplifier (... |
Infineon |
| 401 |
CGY98 |
GaAs MMIC (Broadband Power Amplifier [ 800..2000 Mhz ] GSM,AMPS or PCN Operating voltage range: 2.7 to 5.0 V) |
Siemens |
| 402 |
CGY99 |
GaAs MMIC Broadband 3 stage Power Amp... |
Infineon |
| 403 |
CHM1191 |
GaAs Monolithic Microwave IC |
United Monolithic Semiconductors |
| 404 |
CHM1191-99F/00 |
GaAs Monolithic Microwave IC |
United Monolithic Semiconductors |
| 405 |
CLC5506 |
Gain Trim Amplifier (GTA) |
National Semiconductor |
| 406 |
CLC5506IM |
Gain Trim Amplifier (GTA) |
National Semiconductor |
| 407 |
CLC5506IMX |
Gain Trim Amplifier (GTA) |
National Semiconductor |
| 408 |
CLC5506PCASM |
Gain Trim Amplifier (GTA) |
National Semiconductor |
| 409 |
CLD340 |
GaAs Photodidoe, TO-46 metal can |
Clairex Technologies |
| 410 |
CLED155 |
Gallium Aluminum Arsenide Infrared Emitting Diode |
Clairex Technologies |
| 411 |
CLED155F |
Gallium Aluminum Arsenide Infrared Emitting Diode |
Clairex Technologies |
| 412 |
CLY10 |
GaAs FET (Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz) |
Siemens |
| 413 |
CLY15 |
GaAs FET (Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz) |
Siemens |
| 414 |
CLY2 |
GaAs FET (Power amplifier for mobile phones For frequencies up to 3 GHz) |
Siemens |
| 415 |
CLY5 |
GaAs FET (Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz) |
Siemens |
| 416 |
CM2P-145L |
Gastube arrester, 145V |
SEMITEC |
| 417 |
CM2P-230L |
Gastube arrester, 230V |
SEMITEC |
| 418 |
CM2P-350L |
Gastube arrester, 350V |
SEMITEC |
| 419 |
CM2P-470L |
Gastube arrester, 470V |
SEMITEC |
| 420 |
CM2P-600L |
Gastube arrester, 600V |
SEMITEC |
| | | |
