| No. |
Part Name |
Description |
Manufacturer |
| 451 |
CXY10 |
Gallium arsenide diode with a high cut-off frequency for use in parametric amplifers, frequency multipliers and switches |
Mullard |
| 452 |
CXY10 |
Gallium arsenide varactor diode |
VALVO |
| 453 |
CXY11 |
Gallium arsenide, Gunn effect, element for the X-Band |
VALVO |
| 454 |
CXY11A |
Ga As bulk effect devices employing the Gunn Effect to produce C.W. oscillations at microwave frequency |
Mullard |
| 455 |
CXY11B |
Ga As bulk effect devices employing the Gunn Effect to produce C.W. oscillations at microwave frequency |
Mullard |
| 456 |
CXY11C |
Ga As bulk effect devices employing the Gunn Effect to produce C.W. oscillations at microwave frequency |
Mullard |
| 457 |
CXY12 |
Gallium arsenide diode with a high cut-off frequency for use in frequency multipliers up to Q-Band |
Mullard |
| 458 |
CXY12 |
Gallium Arsenide Multiplier Varactor diode |
Philips |
| 459 |
CXY12 |
Gallium arsenide varactor diode |
VALVO |
| 460 |
CXY13 |
Gallium arsenide, Gunn effect, element for the X-Band |
VALVO |
| 461 |
CXY14 |
Gallium arsenide, Gunn effect, element for the J-Band (Ku-Band) |
VALVO |
| 462 |
CXY19 |
Ga As bulk effect devices employing the Gunn Effect to produce C.W. oscillations at microwave frequency |
Mullard |
| 463 |
CXY20 |
Ga As bulk effect devices employing the Gunn Effect to produce C.W. oscillations at microwave frequency |
Mullard |
| 464 |
CXY22A |
Gallium Arsenide Limiter Diode |
Philips |
| 465 |
CXY22B |
Gallium Arsenide Limiter Diode |
Philips |
| 466 |
CXY23 |
Gallium Arsenide Tuning Diode |
Philips |
| 467 |
CXY26 |
Gallium Arsenide Hyper-Abrupt Varactor Diode |
Philips |
| 468 |
D8740220GT |
GaAs Power Doubler Hybrid 40 - 870MHz |
etc |
| 469 |
DC35GN-15-Q4 0.96 - 1.215GHz |
GaN Transistors |
Microsemi |
| 470 |
DC35GN-15-Q4 1.2 - 1.4GHz |
GaN Transistors |
Microsemi |
| 471 |
DC35GN-15-Q4 2.7 - 3.1GHz |
GaN Transistors |
Microsemi |
| 472 |
DC35GN-15-Q4 3.1 - 3.5GHz |
GaN Transistors |
Microsemi |
| 473 |
DC35GN-15-Q4 300-500MHz |
GaN Transistors |
Microsemi |
| 474 |
DG306AE25 |
Gate Turn-off Thyristor |
Dynex Semiconductor |
| 475 |
DG406BP25 |
Gate Turn-off Thyristor |
Dynex Semiconductor |
| 476 |
DG408BP45 |
Gate Turn-off Thyristor |
Dynex Semiconductor |
| 477 |
DG646BH25 |
Gate Turn-off Thyristor |
Dynex Semiconductor |
| 478 |
DG648BH45 |
Gate Turn-off Thyristor |
Dynex Semiconductor |
| 479 |
DG758BX45 |
Gate Turn-off Thyristor |
Dynex Semiconductor |
| 480 |
DG858BW45 |
Gate Turn-off Thyristor |
Dynex Semiconductor |
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