| No. |
Part Name |
Description |
Manufacturer |
| 361 |
CFY25-20 |
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) |
Siemens |
| 362 |
CFY25-23 |
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) |
Siemens |
| 363 |
CFY30 |
GaAs FET (Low noise Fmin = 1.4 dB @ 4 GHz High gain 11.5 dB typ. @ 4 GHz) |
Siemens |
| 364 |
CFY35 |
GaAs FET (Low noise High gain For low-noise front end amplifiers For DBS down converters) |
Siemens |
| 365 |
CFY35-20 |
GaAs FET (Low noise High gain For low-noise front end amplifiers For DBS down converters) |
Siemens |
| 366 |
CFY35-23 |
GaAs FET (Low noise High gain For low-noise front end amplifiers For DBS down converters) |
Siemens |
| 367 |
CGD15FB45P1 |
Gate driver board (engineering solution) |
Wolfspeed |
| 368 |
CGD15HB62LP |
Gate driver board (engineering solution*) |
Wolfspeed |
| 369 |
CGD15HB62P1 |
Gate driver board (engineering solution) |
Wolfspeed |
| 370 |
CGD15SG00D2 |
Gate Driver Board for 3rd Generation (C3M™) SiC MOSFETs |
Wolfspeed |
| 371 |
CGY0819 |
GaAs MMIC (Tri mode power amplifier for AMPS/ CDMA /TDMA portable cellular phones Dual band operation) |
Siemens |
| 372 |
CGY0918 |
GaAs MMIC (Dual band GSM/PCN power amplifier 35dBm / 34dBm output power at 3.5 V Two amplifiers in a single package) |
Siemens |
| 373 |
CGY11A |
Gallium arsenide gunn device for x band oscillators (CW-operation) |
AEG-TELEFUNKEN |
| 374 |
CGY11B |
Gallium arsenide gunn device for x band oscillators (CW-operation) |
AEG-TELEFUNKEN |
| 375 |
CGY120 |
GaAs MMIC (Monolithic microwave IC MMIC-Amplifier for mobile communication) |
Siemens |
| 376 |
CGY121 |
GaAs MMIC (Variable gain amplifier MMIC-Amplifier for mobile communication Gain Control range over 50dB) |
Siemens |
| 377 |
CGY121A |
GaAs MMIC (Variable gain amplifier MMIC-Amplifier for mobile communication Typical Gain Control range over 50dB) |
Siemens |
| 378 |
CGY121B |
GaAs MMIC (Variable gain amplifier MMIC-Amplifier for mobile communication Gain Control range over 50dB) |
Siemens |
| 379 |
CGY12A |
Gallium arsenide gunn device for x band oscillators (CW-operation) |
AEG-TELEFUNKEN |
| 380 |
CGY12B |
Gallium arsenide gunn device for x band oscillators (CW-operation) |
AEG-TELEFUNKEN |
| 381 |
CGY13A |
Gallium arsenide gunn device for x band oscillators (CW-operation) |
AEG-TELEFUNKEN |
| 382 |
CGY180 |
GaAs MMIC (Power amplifier for DECT and PCS application Fully integrated 3 stage amplifier Operating voltage range: 2.7 to 6 V) |
Siemens |
| 383 |
CGY181 |
GaAs MMIC (Power amplifier for PCN/PCS applications Fully integrated 2 stage amplifier) |
Siemens |
| 384 |
CGY184 |
GaAs MMIC (Power amplifier for PCN applications 2.5 W 34dBm output power at 3.5 V) |
Siemens |
| 385 |
CGY191 |
GaAs MMIC (Dual mode power amplifier for CDMA /TDMA portable cellular phones) |
Siemens |
| 386 |
CGY195 |
GaAs MMIC |
Siemens |
| 387 |
CGY196 |
GaAs MMIC (Broadband Power Amplifier [ 800..3500 Mhz ] DECT,PHS,PCS,GSM,AMPS,WLAN,WLL Single Voltage Supply) |
Siemens |
| 388 |
CGY21 |
GaAs MMIC (Two-stage monolithic microwave IC MMIC amplifier) |
Siemens |
| 389 |
CGY31 |
GaAs MMIC (Two-stage monolithic microwave IC MMIC amplifier All-gold metallization Chip fully passivated) |
Siemens |
| 390 |
CGY40 |
GaAs MMIC (Single-stage monolithic microwave IC MMICamplifier Application range: 100 MHz to 3 GHz) |
Siemens |
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