| No. |
Part Name |
Description |
Manufacturer |
| 9331 |
2N5918 |
10W, 400-MHz High-Gain Silicon NPN Emitter-Ballasted Overaly RF Transistor |
RCA Solid State |
| 9332 |
2N5930 |
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package |
SemeLAB |
| 9333 |
2N5934 |
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package |
SemeLAB |
| 9334 |
2N5937 |
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package |
SemeLAB |
| 9335 |
2N5952 |
Trans JFET N-CH Si 3-Pin TO-92 Box |
New Jersey Semiconductor |
| 9336 |
2N5971 |
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package |
SemeLAB |
| 9337 |
2N5995 |
7W, (CW) 175-MHz Silicon NPN Overlay RF Transistor for 12.5 Volt applications in VHF |
RCA Solid State |
| 9338 |
2N6027 |
Thyristor PUT 40V 5A 3-Pin TO-92 |
New Jersey Semiconductor |
| 9339 |
2N6028 |
Thyristor PUT 40V 5A 3-Pin TO-92 |
New Jersey Semiconductor |
| 9340 |
2N6032 |
Silicon multiepitaxial planar NPN transistor in modified Jedec TO-3 metal case |
SGS-ATES |
| 9341 |
2N6033 |
Silicon multiepitaxial planar NPN transistor in modified Jedec TO-3 metal case |
SGS-ATES |
| 9342 |
2N6034 |
Trans Darlington PNP 40V 4A 3-Pin TO-126 Box |
New Jersey Semiconductor |
| 9343 |
2N6034 |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 9344 |
2N6034B |
Trans Darlington PNP 40V 4A 3-Pin TO-126 Box |
New Jersey Semiconductor |
| 9345 |
2N6035 |
Trans Darlington PNP 60V 4A 3-Pin TO-126 Box |
New Jersey Semiconductor |
| 9346 |
2N6035 |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 9347 |
2N6036 |
Trans Darlington PNP 60V 4A 3-Pin TO-126 |
New Jersey Semiconductor |
| 9348 |
2N6036 |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 9349 |
2N6037 |
Trans Darlington NPN 40V 4A 3-Pin TO-126 Box |
New Jersey Semiconductor |
| 9350 |
2N6037 |
Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 9351 |
2N6038 |
Trans Darlington NPN 60V 4A 3-Pin TO-126 Box |
New Jersey Semiconductor |
| 9352 |
2N6038 |
Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 9353 |
2N6039 |
Trans Darlington NPN 80V 4A 3-Pin TO-126 Box |
New Jersey Semiconductor |
| 9354 |
2N6039 |
Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 9355 |
2N6050 |
Silicon epitaxial-base PNP power transistors in monolithic Darlington configuration |
SGS-ATES |
| 9356 |
2N6051 |
Silicon epitaxial-base PNP power transistors in monolithic Darlington configuration |
SGS-ATES |
| 9357 |
2N6052 |
Silicon epitaxial-base PNP power transistors in monolithic Darlington configuration |
SGS-ATES |
| 9358 |
2N6053 |
Silicon epitaxial-base PNP power transistors in monolithic Darlington configuration |
SGS-ATES |
| 9359 |
2N6054 |
Silicon epitaxial-base PNP power transistors in monolithic Darlington configuration |
SGS-ATES |
| 9360 |
2N6055 |
Silicon epitaxial-base NPN power transistors in monolithic Darlington configuration |
SGS-ATES |
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