| No. |
Part Name |
Description |
Manufacturer |
| 9421 |
2N6433 |
Trans GP BJT PNP 300V 0.1A 3-Pin TO-18 Box |
New Jersey Semiconductor |
| 9422 |
2N6439 |
Trans GP BJT NPN 33V 4-Pin Case 316-01 |
New Jersey Semiconductor |
| 9423 |
2N6461 |
Bipolar NPN Device in a Hermetically sealed TO39 Metal Package |
SemeLAB |
| 9424 |
2N6463 |
Bipolar NPN Device in a Hermetically sealed TO39 Metal Package |
SemeLAB |
| 9425 |
2N6485 |
Trans JFET N-CH 7-Pin TO-71 |
New Jersey Semiconductor |
| 9426 |
2N650 |
PNP Germanium transistor in the audio-frequency range applications |
Motorola |
| 9427 |
2N650 |
Trans GP BJT NPN 350V 0.5A 3-Pin TO-92 |
New Jersey Semiconductor |
| 9428 |
2N650A |
PNP Germanium transistor in the audio-frequency range applications |
Motorola |
| 9429 |
2N651 |
PNP Germanium transistor in the audio-frequency range applications |
Motorola |
| 9430 |
2N651A |
PNP Germanium transistor in the audio-frequency range applications |
Motorola |
| 9431 |
2N652 |
PNP Germanium transistor in the audio-frequency range applications |
Motorola |
| 9432 |
2N652A |
PNP Germanium transistor in the audio-frequency range applications |
Motorola |
| 9433 |
2N653 |
PNP Germanium transistor, for high-gain amplifier and switching service in the audio frequency range |
Motorola |
| 9434 |
2N653 |
PNP Germanium transistor, for high-gain amplifier and switching service in the audio frequency range |
Motorola |
| 9435 |
2N653 |
Trans GP BJT NPN 350V 0.5A 3-Pin TO-92 |
New Jersey Semiconductor |
| 9436 |
2N6530 |
8 A N-P-N darlington power transistor. 80 V. 60 W. Gain of 1000 at 5 A. |
General Electric Solid State |
| 9437 |
2N6531 |
8 A N-P-N darlington power transistor. 100 V. 60 W. Gain of 500 at 3 A. |
General Electric Solid State |
| 9438 |
2N6532 |
8 A N-P-N darlington power transistor. 100 V. 60 W. Gain of 1000 at 5 A. |
General Electric Solid State |
| 9439 |
2N6533 |
8 A N-P-N darlington power transistor. 120 V. 60 W. Gain of 1000 at 3 A. |
General Electric Solid State |
| 9440 |
2N654 |
PNP Germanium transistor, for high-gain amplifier and switching service in the audio frequency range |
Motorola |
| 9441 |
2N654 |
PNP Germanium transistor, for high-gain amplifier and switching service in the audio frequency range |
Motorola |
| 9442 |
2N654 |
Trans GP BJT NPN 350V 0.5A 3-Pin TO-92 |
New Jersey Semiconductor |
| 9443 |
2N655 |
PNP Germanium transistor, for high-gain amplifier and switching service in the audio frequency range |
Motorola |
| 9444 |
2N655 |
PNP Germanium transistor, for high-gain amplifier and switching service in the audio frequency range |
Motorola |
| 9445 |
2N655 |
Trans GP BJT NPN 350V 0.5A 3-Pin TO-92 |
New Jersey Semiconductor |
| 9446 |
2N6560 |
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. |
SemeLAB |
| 9447 |
2N6564 |
Thyristor SCR 400V 20A 3-Pin TO-92 Bulk |
New Jersey Semiconductor |
| 9448 |
2N6565 |
Thyristor SCR 400V 20A 3-Pin TO-92 Bulk |
New Jersey Semiconductor |
| 9449 |
2N6575 |
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package |
SemeLAB |
| 9450 |
2N6576 |
15 A N-P-N darlington power transistor. 60 V. 120 W. Gain of 2000 at 4 A. |
General Electric Solid State |
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