No. |
Part Name |
Description |
Manufacturer |
9451 |
2N6576 |
Trans Darlington Power Transistor 60V 15A 3-Pin (2+Tab) TO-3 |
New Jersey Semiconductor |
9452 |
2N6577 |
15 A N-P-N darlington power transistor. 90 V. 120 W. Gain of 2000 at 4 A. |
General Electric Solid State |
9453 |
2N6577 |
Trans Darlington Power Transistor 90V 15A 3-Pin (2+Tab) TO-3 |
New Jersey Semiconductor |
9454 |
2N6578 |
15 A N-P-N darlington power transistor. 120 V. 120 W. Gain of 2000 at 4 A. |
General Electric Solid State |
9455 |
2N6578 |
Trans Darlington Power Transistor 120V 15A 3-Pin (2+Tab) TO-3 |
New Jersey Semiconductor |
9456 |
2N658 |
Trans GP BJT NPN 350V 0.5A 3-Pin TO-92 |
New Jersey Semiconductor |
9457 |
2N6581 |
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package |
SemeLAB |
9458 |
2N6583 |
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package |
SemeLAB |
9459 |
2N659 |
Trans GP BJT NPN 350V 0.5A 3-Pin TO-92 |
New Jersey Semiconductor |
9460 |
2N6648 |
10 A P-N-P darlington power transistor. -40 V. 70 W. Gain of 1000 at 5 A. |
General Electric Solid State |
9461 |
2N6649 |
10 A P-N-P darlington power transistor. -60 V. 70 W. Gain of 1000 at 5 A. |
General Electric Solid State |
9462 |
2N665 |
PNP germanium power transistor in military and industrial equipment |
Motorola |
9463 |
2N6650 |
10 A P-N-P darlington power transistor. -80 V. 70 W. Gain of 1000 at 5 A. |
General Electric Solid State |
9464 |
2N6653 |
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. |
SemeLAB |
9465 |
2N6654 |
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package |
SemeLAB |
9466 |
2N6659 |
Trans MOSFET N-CH 35V 1.4A 3-Pin TO-205AD |
New Jersey Semiconductor |
9467 |
2N6660 |
Trans MOSFET N-CH 60V 0.99A 3-Pin TO-205AD |
New Jersey Semiconductor |
9468 |
2N6661 |
Trans MOSFET N-CH 90V 0.35A 3-Pin TO-39 |
New Jersey Semiconductor |
9469 |
2N6666 |
10 A P-N-P darlington power transistor. -40 V. 65 W. Gain of 1000 at 3 A. |
General Electric Solid State |
9470 |
2N6667 |
10 A P-N-P darlington power transistor. -60 V. 65 W. Gain of 1000 at 5 A. |
General Electric Solid State |
9471 |
2N6668 |
10 A P-N-P darlington power transistor. -80 V. 65 W. Gain of 1000 at 5 A. |
General Electric Solid State |
9472 |
2N6687 |
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package |
SemeLAB |
9473 |
2N6689 |
Trans GP BJT NPN 300V 15A 3-Pin TO-61 |
New Jersey Semiconductor |
9474 |
2N6690 |
Trans GP BJT NPN 400V 15A 3-Pin TO-61 |
New Jersey Semiconductor |
9475 |
2N6717 |
Trans GP BJT NPN 80V 1A 3-Pin TO-92 |
New Jersey Semiconductor |
9476 |
2N6724 |
Trans Darlington NPN 40V 2A 3-Pin TO-237 Tape and Box |
New Jersey Semiconductor |
9477 |
2N6724-18 |
Trans Darlington NPN 40V 2A 3-Pin TO-237 Tape and Box |
New Jersey Semiconductor |
9478 |
2N6725 |
Trans Darlington NPN 50V 2A 3-Pin TO-237 Tape and Box |
New Jersey Semiconductor |
9479 |
2N6755 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 12A. |
General Electric Solid State |
9480 |
2N6756 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 14A. |
General Electric Solid State |
| | | |