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Datasheets for IN

Datasheets found :: 101347
Page: | 312 | 313 | 314 | 315 | 316 | 317 | 318 | 319 | 320 |
No. Part Name Description Manufacturer
9451 2N6576 Trans Darlington Power Transistor 60V 15A 3-Pin (2+Tab) TO-3 New Jersey Semiconductor
9452 2N6577 15 A N-P-N darlington power transistor. 90 V. 120 W. Gain of 2000 at 4 A. General Electric Solid State
9453 2N6577 Trans Darlington Power Transistor 90V 15A 3-Pin (2+Tab) TO-3 New Jersey Semiconductor
9454 2N6578 15 A N-P-N darlington power transistor. 120 V. 120 W. Gain of 2000 at 4 A. General Electric Solid State
9455 2N6578 Trans Darlington Power Transistor 120V 15A 3-Pin (2+Tab) TO-3 New Jersey Semiconductor
9456 2N658 Trans GP BJT NPN 350V 0.5A 3-Pin TO-92 New Jersey Semiconductor
9457 2N6581 Bipolar NPN Device in a Hermetically sealed TO3 Metal Package SemeLAB
9458 2N6583 Bipolar NPN Device in a Hermetically sealed TO3 Metal Package SemeLAB
9459 2N659 Trans GP BJT NPN 350V 0.5A 3-Pin TO-92 New Jersey Semiconductor
9460 2N6648 10 A P-N-P darlington power transistor. -40 V. 70 W. Gain of 1000 at 5 A. General Electric Solid State
9461 2N6649 10 A P-N-P darlington power transistor. -60 V. 70 W. Gain of 1000 at 5 A. General Electric Solid State
9462 2N665 PNP germanium power transistor in military and industrial equipment Motorola
9463 2N6650 10 A P-N-P darlington power transistor. -80 V. 70 W. Gain of 1000 at 5 A. General Electric Solid State
9464 2N6653 Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. SemeLAB
9465 2N6654 Bipolar NPN Device in a Hermetically sealed TO3 Metal Package SemeLAB
9466 2N6659 Trans MOSFET N-CH 35V 1.4A 3-Pin TO-205AD New Jersey Semiconductor
9467 2N6660 Trans MOSFET N-CH 60V 0.99A 3-Pin TO-205AD New Jersey Semiconductor
9468 2N6661 Trans MOSFET N-CH 90V 0.35A 3-Pin TO-39 New Jersey Semiconductor
9469 2N6666 10 A P-N-P darlington power transistor. -40 V. 65 W. Gain of 1000 at 3 A. General Electric Solid State
9470 2N6667 10 A P-N-P darlington power transistor. -60 V. 65 W. Gain of 1000 at 5 A. General Electric Solid State
9471 2N6668 10 A P-N-P darlington power transistor. -80 V. 65 W. Gain of 1000 at 5 A. General Electric Solid State
9472 2N6687 Bipolar NPN Device in a Hermetically sealed TO3 Metal Package SemeLAB
9473 2N6689 Trans GP BJT NPN 300V 15A 3-Pin TO-61 New Jersey Semiconductor
9474 2N6690 Trans GP BJT NPN 400V 15A 3-Pin TO-61 New Jersey Semiconductor
9475 2N6717 Trans GP BJT NPN 80V 1A 3-Pin TO-92 New Jersey Semiconductor
9476 2N6724 Trans Darlington NPN 40V 2A 3-Pin TO-237 Tape and Box New Jersey Semiconductor
9477 2N6724-18 Trans Darlington NPN 40V 2A 3-Pin TO-237 Tape and Box New Jersey Semiconductor
9478 2N6725 Trans Darlington NPN 50V 2A 3-Pin TO-237 Tape and Box New Jersey Semiconductor
9479 2N6755 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 12A. General Electric Solid State
9480 2N6756 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 14A. General Electric Solid State


Datasheets found :: 101347
Page: | 312 | 313 | 314 | 315 | 316 | 317 | 318 | 319 | 320 |



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