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Datasheets for IN

Datasheets found :: 101347
Page: | 310 | 311 | 312 | 313 | 314 | 315 | 316 | 317 | 318 |
No. Part Name Description Manufacturer
9391 2N6235 Bipolar NPN Device in a Hermetically sealed TO66 Metal Package SemeLAB
9392 2N6240 Thyristor SCR 400V 35A 3-Pin TO-225 New Jersey Semiconductor
9393 2N6241 Thyristor SCR 400V 35A 3-Pin TO-225 New Jersey Semiconductor
9394 2N6247 Bipolar PNP Device in a Hermetically sealed TO3 Metal Package SemeLAB
9395 2N6253 Bipolar NPN Device in a Hermetically sealed TO3 Metal Package SemeLAB
9396 2N6270 Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. SemeLAB
9397 2N6288 Epitaxial-base silicon NPN transistor in Jedec TO-220 plastic package SGS-ATES
9398 2N6290 Epitaxial-base silicon NPN transistor in Jedec TO-220 plastic package SGS-ATES
9399 2N6292 Epitaxial-base silicon NPN transistor in Jedec TO-220 plastic package SGS-ATES
9400 2N6303 Silicon epitaxial planar PNP transistor in Jedec TO-39 metal case SGS-ATES
9401 2N6304 Trans GP BJT NPN 15V 0.05A 4-Pin TO-72 New Jersey Semiconductor
9402 2N6350 Trans Darlington NPN 80V 5A 4-Pin TO-33 New Jersey Semiconductor
9403 2N6351 Trans Darlington NPN 150V 5A 4-Pin TO-33 New Jersey Semiconductor
9404 2N6380 Trans GP BJT PNP 80V 50A 3-Pin TO-63 New Jersey Semiconductor
9405 2N6383 10 A N-P-N darlington power transistor. 40 V. 100 W. Gain of 1000 at 5 A. General Electric Solid State
9406 2N6384 10 A N-P-N darlington power transistor. 60 V. 100 W. Gain of 1000 at 5 A. General Electric Solid State
9407 2N6385 10 A N-P-N darlington power transistor. 80 V. 100 W. Gain of 1000 at 5 A. General Electric Solid State
9408 2N6386 10 A N-P-N darlington power transistor. 40 V. 65 W. Gain of 1000 at 3 A. General Electric Solid State
9409 2N6386 Silicon epitaxial-base NPN power transistor in monolithic Darlington configuration SGS-ATES
9410 2N6387 10 A N-P-N darlington power transistor. 60 V. 65 W. Gain of 1000 at 5 A. General Electric Solid State
9411 2N6387 Silicon epitaxial-base NPN power transistor in monolithic Darlington configuration SGS-ATES
9412 2N6388 10 A N-P-N darlington power transistor. 80 V. 65 W. Gain of 1000 at 5 A. General Electric Solid State
9413 2N6388 Silicon epitaxial-base NPN power transistor in monolithic Darlington configuration SGS-ATES
9414 2N6389 Trans GP BJT PNP 80V 50A 3-Pin TO-63 New Jersey Semiconductor
9415 2N6425 Bipolar PNP Device in a Hermetically sealed TO66 Metal Package SemeLAB
9416 2N6428 Trans GP BJT NPN 50V 0.2A 3-Pin TO-92 Sleeve New Jersey Semiconductor
9417 2N6428A Trans GP BJT NPN 50V 0.2A 3-Pin TO-92 New Jersey Semiconductor
9418 2N6430 Trans GP BJT NPN 200V 0.1A 3-Pin TO-18 Box New Jersey Semiconductor
9419 2N6431 Trans GP BJT NPN 300V 0.1A 3-Pin TO-18 Box New Jersey Semiconductor
9420 2N6432 Trans GP BJT PNP 200V 0.1A 3-Pin TO-18 Box New Jersey Semiconductor


Datasheets found :: 101347
Page: | 310 | 311 | 312 | 313 | 314 | 315 | 316 | 317 | 318 |



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