No. |
Part Name |
Description |
Manufacturer |
9391 |
2N6235 |
Bipolar NPN Device in a Hermetically sealed TO66 Metal Package |
SemeLAB |
9392 |
2N6240 |
Thyristor SCR 400V 35A 3-Pin TO-225 |
New Jersey Semiconductor |
9393 |
2N6241 |
Thyristor SCR 400V 35A 3-Pin TO-225 |
New Jersey Semiconductor |
9394 |
2N6247 |
Bipolar PNP Device in a Hermetically sealed TO3 Metal Package |
SemeLAB |
9395 |
2N6253 |
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package |
SemeLAB |
9396 |
2N6270 |
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. |
SemeLAB |
9397 |
2N6288 |
Epitaxial-base silicon NPN transistor in Jedec TO-220 plastic package |
SGS-ATES |
9398 |
2N6290 |
Epitaxial-base silicon NPN transistor in Jedec TO-220 plastic package |
SGS-ATES |
9399 |
2N6292 |
Epitaxial-base silicon NPN transistor in Jedec TO-220 plastic package |
SGS-ATES |
9400 |
2N6303 |
Silicon epitaxial planar PNP transistor in Jedec TO-39 metal case |
SGS-ATES |
9401 |
2N6304 |
Trans GP BJT NPN 15V 0.05A 4-Pin TO-72 |
New Jersey Semiconductor |
9402 |
2N6350 |
Trans Darlington NPN 80V 5A 4-Pin TO-33 |
New Jersey Semiconductor |
9403 |
2N6351 |
Trans Darlington NPN 150V 5A 4-Pin TO-33 |
New Jersey Semiconductor |
9404 |
2N6380 |
Trans GP BJT PNP 80V 50A 3-Pin TO-63 |
New Jersey Semiconductor |
9405 |
2N6383 |
10 A N-P-N darlington power transistor. 40 V. 100 W. Gain of 1000 at 5 A. |
General Electric Solid State |
9406 |
2N6384 |
10 A N-P-N darlington power transistor. 60 V. 100 W. Gain of 1000 at 5 A. |
General Electric Solid State |
9407 |
2N6385 |
10 A N-P-N darlington power transistor. 80 V. 100 W. Gain of 1000 at 5 A. |
General Electric Solid State |
9408 |
2N6386 |
10 A N-P-N darlington power transistor. 40 V. 65 W. Gain of 1000 at 3 A. |
General Electric Solid State |
9409 |
2N6386 |
Silicon epitaxial-base NPN power transistor in monolithic Darlington configuration |
SGS-ATES |
9410 |
2N6387 |
10 A N-P-N darlington power transistor. 60 V. 65 W. Gain of 1000 at 5 A. |
General Electric Solid State |
9411 |
2N6387 |
Silicon epitaxial-base NPN power transistor in monolithic Darlington configuration |
SGS-ATES |
9412 |
2N6388 |
10 A N-P-N darlington power transistor. 80 V. 65 W. Gain of 1000 at 5 A. |
General Electric Solid State |
9413 |
2N6388 |
Silicon epitaxial-base NPN power transistor in monolithic Darlington configuration |
SGS-ATES |
9414 |
2N6389 |
Trans GP BJT PNP 80V 50A 3-Pin TO-63 |
New Jersey Semiconductor |
9415 |
2N6425 |
Bipolar PNP Device in a Hermetically sealed TO66 Metal Package |
SemeLAB |
9416 |
2N6428 |
Trans GP BJT NPN 50V 0.2A 3-Pin TO-92 Sleeve |
New Jersey Semiconductor |
9417 |
2N6428A |
Trans GP BJT NPN 50V 0.2A 3-Pin TO-92 |
New Jersey Semiconductor |
9418 |
2N6430 |
Trans GP BJT NPN 200V 0.1A 3-Pin TO-18 Box |
New Jersey Semiconductor |
9419 |
2N6431 |
Trans GP BJT NPN 300V 0.1A 3-Pin TO-18 Box |
New Jersey Semiconductor |
9420 |
2N6432 |
Trans GP BJT PNP 200V 0.1A 3-Pin TO-18 Box |
New Jersey Semiconductor |
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