| No. |
Part Name |
Description |
Manufacturer |
| 9361 |
2N6056 |
Silicon epitaxial-base NPN power transistors in monolithic Darlington configuration |
SGS-ATES |
| 9362 |
2N6057 |
Silicon epitaxial-base NPN power transistor in monolithic Darlington configuration |
SGS-ATES |
| 9363 |
2N6058 |
Silicon epitaxial-base NPN power transistor in monolithic Darlington configuration |
SGS-ATES |
| 9364 |
2N6059 |
Silicon epitaxial-base NPN power transistor in monolithic Darlington configuration |
SGS-ATES |
| 9365 |
2N6076 |
Trans GP BJT PNP 25V 0.1A 3-Pin TO-92 Box |
New Jersey Semiconductor |
| 9366 |
2N6077 |
Bipolar NPN Device in a Hermetically sealed TO66 Metal Package |
SemeLAB |
| 9367 |
2N6079 |
Bipolar NPN Device in a Hermetically sealed TO66 Metal Package |
SemeLAB |
| 9368 |
2N6081 |
Trans GP BJT NPN 18V 2.5A 4-Pin Style M135 |
New Jersey Semiconductor |
| 9369 |
2N6084 |
Trans GP BJT NPN 18V 6A 4-Pin Style M135 |
New Jersey Semiconductor |
| 9370 |
2N6105 |
Hotspotting in RF Power Transistors - Application Note |
RCA Solid State |
| 9371 |
2N6107 |
Epitaxial-base silicon PNP transistor in Jedec TO-220 plastic package |
SGS-ATES |
| 9372 |
2N6107 |
PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 70Vdc, Vcb = 80Vdc, Veb = 5Vdc Ic = 7Adc, PD = 40W. |
USHA India LTD |
| 9373 |
2N6109 |
Epitaxial-base silicon PNP transistor in Jedec TO-220 plastic package |
SGS-ATES |
| 9374 |
2N6111 |
Epitaxial-base silicon PNP transistor in Jedec TO-220 plastic package |
SGS-ATES |
| 9375 |
2N6128 |
Trans GP BJT NPN 80V 10A 3-Pin TO-61 |
New Jersey Semiconductor |
| 9376 |
2N6132 |
Trans GP BJT PNP 100V 5A 3-Pin TO-39 |
New Jersey Semiconductor |
| 9377 |
2N6133 |
Trans GP BJT PNP 100V 5A 3-Pin TO-39 |
New Jersey Semiconductor |
| 9378 |
2N6134 |
Trans GP BJT PNP 100V 5A 3-Pin TO-39 |
New Jersey Semiconductor |
| 9379 |
2N6180 |
Trans GP BJT PNP 80V 10A 3-Pin TO-59 |
New Jersey Semiconductor |
| 9380 |
2N6182 |
Trans GP BJT PNP 80V 10A 3-Pin TO-59 |
New Jersey Semiconductor |
| 9381 |
2N6183 |
Trans GP BJT PNP 80V 10A 3-Pin TO-59 |
New Jersey Semiconductor |
| 9382 |
2N6184 |
Trans GP BJT PNP 100V 10A 3-Pin TO-59 |
New Jersey Semiconductor |
| 9383 |
2N6185 |
Trans GP BJT PNP 100V 10A 3-Pin TO-59 |
New Jersey Semiconductor |
| 9384 |
2N6186 |
Trans GP BJT PNP 80V 10A 3-Pin TO-59 |
New Jersey Semiconductor |
| 9385 |
2N6187 |
Trans GP BJT PNP 80V 10A 3-Pin TO-59 |
New Jersey Semiconductor |
| 9386 |
2N6188 |
Trans GP BJT PNP 100V 10A 3-Pin TO-59 |
New Jersey Semiconductor |
| 9387 |
2N6189 |
Trans GP BJT PNP 100V 10A 3-Pin TO-59 |
New Jersey Semiconductor |
| 9388 |
2N6190 |
Trans GP BJT PNP 80V 5A 3-Pin TO-39 Box |
New Jersey Semiconductor |
| 9389 |
2N6230 |
Bipolar PNP Device in a Hermetically sealed TO3 Metal Package |
SemeLAB |
| 9390 |
2N6234 |
Bipolar NPN Device in a Hermetically sealed TO66 Metal Package. |
SemeLAB |
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